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PDF AOW298 Data sheet ( Hoja de datos )
| Número de pieza | AOW298 | |
| Descripción | 100V N-Channel MOSFET | |
| Fabricantes | Alpha & Omega Semiconductors | |
| Logotipo |  |
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AOW298
100V N-Channel MOSFET
General Description
Product Summary
The AOW298 uses Trench MOSFET technology that is
uniquely optimized to provide the most efficient high
frequency switching performance. Power losses are
minimized due to an extremely low combination of RDS(ON)
and Crss. In addition, switching behavior is well controlled
with a soft recovery body diode.This device is ideal for
boost converters and synchronous rectifiers for consumer,
telecom, industrial power supplies and LED backlighting.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
100% UIS Tested
100% Rg Tested
TO-262
Top View
Bottom View
D
100V
58A
< 14.5mΩ
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
ID
IDM
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche energy L=0.1mH C
IDSM
IAS, IAR
EAS, EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
G
S
Maximum
100
±20
58
41
130
9
7
20
20
100
50
2.1
1.33
-55 to 175
Typ Max
12 15
50 60
1.2 1.5
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Rev 0 : Oct. 2011
www.aosmd.com
Page 1 of 6
Free Datasheet http://www.datasheet4u.com/
1 page  
AOW298
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
80 120
60 90
40 60
20 30
0
0 25 50 75 100 125 150 175
TCASE (°C)
Figure 17: Current De-rating (Note F)
0
0 25 50 75 100 125 150 175
TCASE (°C)
Figure 18: Power De-rating (Note F)
100
TA=25°C
TA=100°C
TA=125°C
TA=150°C
10
1 10 100
Time in avalanche, tA (µs)
Figure 19: Single Pulse Avalanche capability
(Note C)
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1 RθJA=60°C/W
10000
1000
100
10
TA=25°C
17
5
2
10
1
0.00001
0.001
0.1
10 0
1000
Pulse Width (s)
18
Figure 20: Single Pulse Power Rating Junction-to-
Ambient (Note H)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
0.1
0.01
0.001
0.001
Single Pulse
PD
Ton
T
0.01 0.1 1 10
Pulse Width (s)
Figure 21: Normalized Maximum Transient Thermal Impedance (Note H)
100
1000
Rev0 : Oct. 2011
www.aosmd.com
Page 5 of 6
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet AOW298.PDF ] | |
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