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Número de pieza | IDB30E120 | |
Descripción | Fast Switching Emitter Controlled Diode | |
Fabricantes | Infineon Technologies | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de IDB30E120 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! Fast Switching Emitter Controlled Diode
Feature
• 1200 V Emitter Controlled technology
• Fast recovery
• Soft switching
• Low reverse recovery charge
• Low forward voltage
• Easy paralleling
* RoHS compliant
IDB30E120
Product Summary
VRRM
1200
IF
VF
Tjmax
30
1.65
150
V
A
V
°C
PG-TO263-3-2
2
1
3
Type
IDB30E120
Package
Ordering Code Marking Pin 1 PIN 2 PIN 3
PG-TO263-3-2
-
D30E120 NC
C
A
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Repetitive peak reverse voltage
Continous forward current
TC=25°C
TC=90°C
VRRM
IF
Surge non repetitive forward current
IFSM
TC=25°C, tp=10 ms, sine halfwave
Maximum repetitive forward current
IFRM
TC=25°C, tp limited by Tjmax, D=0.5
Power dissipation
TC=25°C
TC=90°C
Ptot
Operating and storage temperature
Soldering temperature
reflow soldering, MSL1
Tj , Tstg
TS
Value
1200
50
30
102
76.5
138
66
-55...+150
260
Unit
V
A
W
°C
°C
Rev.2.3
Page 1
2013-07-02
1 page 5 Typ. reverse recovery time
trr = f (diF/dt)
parameter: VR = 800V, Tj = 125°C
1100
ns
900
800
60A
30A
15A
700
600
500
400
300
200
200 300 400 500 600 700 800 A/µs 1000
diF/dt
7 Typ. reverse recovery current
Irr = f (diF/dt)
parameter: VR = 800V, Tj = 125°C
35
IDB30E120
6 Typ. reverse recovery charge
Qrr=f(diF/dt)
parameter: VR = 800V, Tj = 125 °C
6500
nC
60A
5500
5000
4500
30A
4000
3500
15A
3000
2500
200 300 400 500 600 700 800 A/µs 1000
diF/dt
8 Typ. reverse recovery softness factor
S = f(diF/dt)
parameter: VR = 800V, Tj = 125°C
18
A
60A
30A
15A
25
20
15
10
14
60A
12 30A
15A
10
8
6
5
200 300 400 500 600 700 800 A/µs 1000
diF/dt
Rev.2.3
Page 5
4
200 300 400 500 600 700 800 A/µs 1000
diF/dt
2013-07-02
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet IDB30E120.PDF ] |
Número de pieza | Descripción | Fabricantes |
IDB30E120 | Fast Switching Emitter Controlled Diode | Infineon Technologies |
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