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PDF MMBT5550 Data sheet ( Hoja de datos )
| Número de pieza | MMBT5550 | |
| Descripción | HIGH VOLTAGE TRANSISTOR | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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MMBT5550
CASE 318-02/03, STYLE 6
SOT-23 (TO-236AA/AB)
HIGH VOLTAGE TRANSISTOR
NPN SILICON
Refer to 2N5550 for graphs.
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous
Symbol
vCEO
vCB0
vEBO
'C
THERMAL CHARACTERISTICS
Characteristic
Symbol
"Total Device Dissipation, T^ = 25°C
Derate above 25°C
PD
Storage Temperature
T stq
'Thermal Resistance Junction to Ambient
ReJA
"Package mounted on 99.5% alumina 10 x 8 x 0.6 mm.
ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
dC = 1.0 mAdc, jb = 0)
Collector-Base Breakdown Voltage
dC = 10 ^Adc, lc = 0)
Emitter-Base Breakdown Voltage
(IE = 10 /nAdc, lc = 0)
Collector Cutoff Current
(Vcb = 100 Vdc, l£ = 0)
(VCB = 100 Vdc, l E = 0, TA = 100°C)
Emitter Cutoff Current
(VE b = 4.0 Vdc, lc = 0)
ON CHARACTERISTICS
DC Current Gain
HC = 1.0 hi Adc, Vce = 5.0 Vdc)
dC = 10 mAdc, Vce = 5.0 Vdc)
dC = 50 mAdc, Vce = 5.0 Vdc)
Collector-Emitter Saturation Voltage
dC = 10 mAdc, Ib = 1.0 mAdc)
dC = 50 mAdc, Ib = 5.0 mAdc)
Base-Emitter Saturation Voltage
dC = 10 mAdc, Ib = 1.0 mAdc)
=(\C: 50 mAdc, Ib = 5.0 mAdc)
SMALL-SIGNAL CHARACTERISTICS
—Current-Gain Bandwidth Product
dC =. 10 mAdc, VC e = 10 Vdc, f = 100 MHz)
Output Capacitance
(Vc8 = 10 Vdc, El = 0, f = 1.0 MHz)
Input Capacitance
(Vbe = 0.5 Vdc, cl = 0, f = 1.0 MHz)
Symbol
v (BR)CEO
v (BR)CBO
v (BR)EBO
ICBO
!EBO
Min
140
160
6.0
-
—
hFE
VCE(sat)
v BE(sat)
60
60
20
-
-
fT
C bo
Cj DO
100
—
—
Value
140
160
6.0
600
Max
350
2.8
150
357
Max
-
—
—
100
100
50
250
0.15
0.25
1.0
1.2
300
6.0
30
Unit
Vdc
Vdc
Vdc
mAdc
Unit
mW
mW/°C
°C
°C/W
Unit
Vdc
Vdc
Vdc
nAdc
^Adc
nAdc
Vdc
Vdc
MHz
pF
pF
3-98
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| PDF Descargar | [ Datasheet MMBT5550.PDF ] | |
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