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PDF MBR10H100CT Data sheet ( Hoja de datos )
| Número de pieza | MBR10H100CT | |
| Descripción | Power Schottky Rectifier | |
| Fabricantes | SI Semiconductors | |
| Logotipo |  |
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深圳深爱半导体股份有限公司
Shenzhen SI Semiconductors Co., LTD.
产品规格书
Product Specification
肖特基二极管/Power Schottky Rectifier
MBR10H100CT
●特点：抗高浪涌性能 高功效 低正向电 大电流 低功耗 符合 RoHS 规范
●FEATURES：■HIGH SURGE CAPABILITY ■HIGH EFFICIENCY ■LOW FORWARD VOLTAGE
■ ■ ■HIGH CURRENT CAPABILITY LOW POWER LOSS RoHS COMPLIANT
●应用：低压高频逆变电路 续流电流 保护电流
●APPLICATION: ■LOW VOLTAGE,HIGH FREQUENCY INVERTERS ■FREE WHEELING
■POLARITY PROTECTION APPLICATIONS
●最大额定值（Tc=25°C
●Absolute Maximum Ratings（Tc=25°C） TO-220/TO-220FP
参数
PARAMETER
符号
SYMBOL
额定值
VALUE
单位
UNIT
向重复峰值电压
V
Repetitive Peak Reverse Voltage
VRRM
100
最大直流阻断电压
Maximum DC Reverse Voltage
VRRM
100
V
平均整流输出电流
Average Rectified Output Current
@Tc=125°C
正向峰值浪涌电流
IF(AV)
10 A
MBR10H100CT
Peak Forward Surge Current
8.3ms Single half sine-wave
superimposed on rated load
(JEDEC Method)
IFSM
80 A
最高结温
Maximum Operating Junction
Temperature
Tj
贮存温度
Storage Temperature
Tstg
●电特性（Tc=25°C）
●Electronic Characteristics（Tc=25°C）
175
-65-150
℃
℃
MBR10H100CTFP
参数名称
CHARACTERISTICS
正向压降
Forward Voltage Drop
符号
SYMBOL
VFM
测试条件
TEST CONDITION
@IF=5A,Tc=25°C
@IF=5A,Tc=125°C
@IF=10A,Tc=25°C
@IF=10A,Tc=125°C
最小值
MIN
典型值
TYP
最大值
MAX
0.83
0.70
0.90
0.80
单位
UNIT
V
反向电流
Peak Reverse Current @ Rated VR
IRM
@Tc=25°
@Tc=125°C
0.01
mA
5
●热特性
●Thermal Characteristics
项目
PARAMETER
热阻结-壳
Thermal Resistance Junction-case
符号
SYMBOL
RthJC
最大值
VALUE
TO-220: 2.2
TO-220FP: 5
单位
UNIT
K/W
●订单信息/ORDERING INFORMATION:
包装形式/PACKING
订货编码/ORDERING CODE
普通塑封料/ Normal Package Material
无卤塑封料/Halogen Free
TO-220 条管装/TUBE PACKING
MBR10H100CT TO-220-TU
MBR10H100CT TO-220-TU-HF
TO-220FP 条管装/TUBE PACKING
MBR10H100CT TO-220FP-TU
MBR10H100CT TO-220FP-TU-HF
Si semiconductors 2013.1
1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet MBR10H100CT.PDF ] | |
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