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PDF HSC106D Data sheet ( Hoja de datos )
| Número de pieza | HSC106D | |
| Descripción | Silicon Controlled Rectifier | |
| Fabricantes | SemiHow | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de HSC106D (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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HSC106D/M
Silicon Controlled Rectifier
FEATURES
Repetitive Peak Off-State Voltage (VDRM=400V/600V)
R.M.S On-State Current (IT(RMS)=4.0A)
Average On-State Current (IT(AV)=2.55A)
General Description
Glassivated PNPN devices designed for high volume consumer
applications such as temperature, light and speed control, process
and remote control, and warning systems where reliability of
operation is important.
Dec 2014
VDRM =
400V / 600 V
IT(RMS) = 4.0A
Symbol 2.Anode
1.Cathode
3.Gate
TO-126
1. K
2. A
3. G
1
2
3
HSC106D/M
Absolute Maximum Ratings (Ta=25℃)
Symbol
Parameter
VDRM
Repetitive Peak Off-State Voltage (Forward) HSC106D
HSC106M
VRRM
Repetitive Peak Off-State Voltage (Reverse) HSC106D
HSC106M
IT(RMS)
IT(AV)
ITSM
PGM
R.M.S On-State Current (All conduction angles)
Average On-State Current
Surge On-State Current
(1/2 Cycle, 60Hz, Sine Wave, Non Repetitive, Tj=110℃)
Forward Peak Gate Power Dissipation
(Pulse Width ≤1.0μsec, Tc=80℃)
PG(AV)
Forward Average Gate Power Dissipation
(Pulse Width ≤1.0μsec, Tc=80℃)
VRGM
IFGM
Reverse Peak Gate Voltage
Forward Peak Gate Current
(Pulse Width ≤1.0μsec, Tc=80℃)
TSTG Storage Temperature Range
Tj Operating Junction Temperature
Value
400
600
400
600
4.0
2.55
20
0.5
0.1
6.0
0.2
-40 to +150
-40 to +110
Units
V
V
A
A
A
W
W
V
A
℃
℃
◎ SEMIHOW REV.A0, December 2014
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet HSC106D.PDF ] | |
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