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CR04AM Schematic ( PDF Datasheet ) - Mitsubishi Electric Semiconductor

Teilenummer CR04AM
Beschreibung LOW POWER USE GLASS PASSIVATION TYPE
Hersteller Mitsubishi Electric Semiconductor
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Gesamt 6 Seiten
CR04AM Datasheet, Funktion
CR04AM
MITSUBISHI SEMICONDUCTOR THYRISTOR
CR04AM
LOW POWER USE
GLASS PASSIVATION TYPE
OUTLINE DRAWING
φ5.0 MAX
4.4
Dimensions
in mm
2
3
1
VOLTAGE
CLASS
TYPE
NAME
1 T1 TERMINAL
2 T2 TERMINAL
3 GATE TERMINAL
CIRCUMSCRIBE
CIRCLE
φ0.7
1.25 1.25
• IT (AV) ........................................................................ 0.4A
• VDRM ..............................................................400V/600V
• IGT ......................................................................... 100µA
132
JEDEC : TO-92
APPLICATION
Ignitor, solid state relay, strobe flasher, circuit breaker, other general purpose control applications
MAXIMUM RATINGS
Symbol
Parameter
VRRM
VRSM
VR (DC)
VDRM
VD (DC)
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltage
DC off-state voltage
V1
V1
Voltage class
8 12
400 600
500 720
320 480
400 600
320 480
Unit
V
V
V
V
V
Symbol
IT (RMS)
IT (AV)
ITSM
I2t
Parameter
RMS on-state current
Average on-state current
Surge on-state current
I2t for fusing
PGM Peak gate power dissipation
PG (AV)
Average gate power dissipation
VFGM
Peak gate forward voltage
VRGM
Peak gate reverse voltage
IFGM
Peak gate forward current
Tj Junction temperature
Tstg Storage temperature
— Weight
V1. With Gate-to-cathode resistance RGK=1k
Conditions
Commercial frequency, sine half wave, 180° conduction, Ta=54°C
60Hz sine half wave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Typical value
Ratings
0.63
0.4
10
0.4
0.5
0.1
6
6
0.3
–40 ~ +125
–40 ~ +125
0.23
Unit
A
A
A
A2s
W
W
V
V
A
°C
°C
g
Feb.1999






CR04AM Datasheet, Funktion
REPETITIVE PEAK REVERSE VOLTAGE VS.
JUNCTION TEMPERATURE
160
140
120
100
80
60
40
20
0
–40 –20 0 20 40 60 80 100 120 140 160
JUNCTION TEMPERATURE (°C)
MITSUBISHI SEMICONDUCTOR THYRISTOR
CR04AM
LOW POWER USE
GLASS PASSIVATION TYPE
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
104
7 TYPICAL EXAMPLE
5 IGT (DC)
3 # 1 10µA
2 # 2 65µA
103 # 1
7 #2
5
3
2
102
7
5
3
2
Tj = 25°C
101
100 2 3 4 5 7 101
2 3 4 5 7 102
GATE CURRENT PULSE WIDTH (µs)
Feb.1999

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