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PDF XBS104S13R-G Data sheet ( Hoja de datos )

Número de pieza XBS104S13R-G
Descripción Schottky Barrier Diode
Fabricantes Torex Semiconductor 
Logotipo Torex Semiconductor Logotipo



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No Preview Available ! XBS104S13R-G Hoja de datos, Descripción, Manual

XBS104S13R-G
Schottky Barrier Diode, 1A, 40V Type
ETR1608-003
FEATURES
Forward Voltage
: VF=0.49V (TYP.)
Forward Current
: IF(AV)=1A
Repetitive Peak Reverse Voltage : VRM=40V
Environmentally Friendly
: EU RoHS Compliant, Pb Free
ABSOLUTE MAXIMUM RATINGS
Ta=25
PARAMETER
SYMBOL RATINGS UNIT
Repetitive Peak Reverse Voltage
VRM
40 V
Reverse Voltage (DC)
VR 40 V
Forward Current (Average)
IF(AV)
1A
Non Continuous
Forward Surge Current *1
IFSM
10
Junction Temperature
Tj 125
Storage Temperature Range
Tstg -55+150
*1Non continuous high amplitude 60Hz half-sine wave.
A
APPLICATIONS
Rectification
Protection against reverse connection of battery
PACKAGING INFORMATION
MARKING RULE
Cathode Bar
①②
: 1 (Product Number)
: Assembly Lot Number
SOD-323A
PRODUCT NAME
PRODUCT NAME
DEVICE ORIENTATION
XBS104S13R-G
SOD-323A (Halogen & Antimony free)
XBS104S13R
SOD-323A
* The “-G” suffix indicates that the products are Halogen and Antimony free as well as being fully RoHS compliant.
* The device orientation is fixed in its embossed tape pocket.
Unit : mm
ELECTRICAL CHARACTERISTICS
PARAMETER
Forward Voltage
Reverse Current
Inter-Terminal Capacity
Reverse Recovery Time *2
*2trr measurement circuit
SYMBOL
TEST CONDITIONS
VF1 IF=100mA
VF2 IF=1A
IR VR=40V
Ct VR=10V , f=1MHz
trr IF=IR=10mA , irr=1mA , RL=100Ω
Biasアス
Device UnderTest
Pulse Generatrix生器
A
Oscilloscope
オシロスコープ
MIN.
-
-
-
-
-
LIMITS
TYP.
0.34
0.49
4
35
25
Ta=25
MAX.
-
0.54
200
-
-
UNIT
V
V
μA
pF
ns
IF
trr
0
irr
IR
t
1/3

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