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CQ89N Schematic ( PDF Datasheet ) - Central Semiconductor Corp

Teilenummer CQ89N
Beschreibung 2.0 AMP TRIAC 400 THRU 800 VOLTS
Hersteller Central Semiconductor Corp
Logo Central Semiconductor Corp Logo 




Gesamt 2 Seiten
CQ89N Datasheet, Funktion
CQ89D
CQ89M
CQ89N
2.0 AMP TRIAC
400 THRU 800 VOLTS
SOT-89
SOT-89 CASE
CentralTM
Semiconductor Corp.
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CQ89D
series types are epoxy molded silicon triacs
designed for full wave AC control applications
featuring gate triggering in all four (4)
quadrants.
MAXIMUM RATINGS (TC=25oC)
Peak Repetitive Off-State Voltage
RMS On-State Current (TC=80oC)
Peak One Cycle Surge (10ms)
Peak Gate Current
Average Gate Power Dissipation
StorageTemperature
Junction Temperature
Thermal Resistance
SYMBOL
VDRM
IT(RMS)
ITSM
IGM
PG(AV)
Tstg
TJ
ΘJ-C
CQ89D CQ89M CQ89N
400 600 800
2.0
10
1.0
0.1
-45 to +150
-45 to +125
10
UNITS
V
A
A
A
W
oC
oC
oC/W
ELECTRICAL CHARACTERISTICS (TC=25oC unless otherwise noted)
SYMBOL
IDRM
IDRM
IGT
IH
VGT
VTM
dv/dt
TEST CONDITIONS
VD=Rated VDRM
VD=Rated VDRM, TC=125oC
VD=12V, QUAD I, II, III, IV
VD=12V
VD=12V
IT=3.0A
VD=2 3 VDRM, TC=125oC
MIN TYP MAX
5.00
200
25
25
2.00
1.75
100
UNITS
µA
µA
mA
mA
V
V
V/µs
252





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