No Preview Available !
WILLAS
SO1.0TA-S8U9RFPAlCaEsMtOicUN-ET SnCcHaOpTTsKuY BlaAtReRIETRrRaEnCsTIiFsIEtRoSr-s20V- 200V
SOD-123+ PACKAGE
FM120-M+
D882 THRU
FM1200-M
Pb Free Produc
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
TRANSISTOoRpti(mNizPeNb)oard space.
• Low power loss, high efficiency.
FEATURE•SHigh current capability, low forward voltage drop.
Power •diHsisgihpsautirogne capability.
• Guardring for overvoltage protection.
Pb-Free pa• cUkltaragheigihs-sapveeadilsawbitlcehing.
RoHS prod•uScilticfoonr eppaitcakxinalgplcaondarechsiupf,fmixe”taGl ”silicon junction.
Halogen fre• eLMeIpaLrd-oS-fdTreDue-c1pt9af5ort0sr0mp/2ae2ec8tkeinngvircoonmdeenstaulfsfitxan“dHa”rds of
• RoHS product for packing code suffix "G"
Package outline
SOD-123H
SOT-89
0.146(3.7)
0.130(3.3)
1. BASE
2. COLLECTOR
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Halogen free product for packing code suffix "H"
Mechanical data
MAXIMU•MEpRoxAyT: IUNLG94S-V(0Traa=te2d5f℃lamuenrleetasrsdaonttherwise noted)
• Case : Molded plastic, SOD-123H
Symbol • Terminals :PlPaaterdamteermteirnals, solderable pVearluMeIL-STDU-7n5it0,
3. EMITTER
0.031(0.8) Typ.
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
VCBO
VCEO
VEBO
IC
Collector-MBeatsheodV2o0lta2g6e
• PoClaorllietyct:oInr-dEicmaittetedr bVyocltaatgheode band
• Mounting Position : Any
Emitter-Base Voltage
• Weight : Approximated 0.011 gram
Collector Current -Continuous
40
30
6
3
V
V
V
A
Dimensions in inches and (millimeters)
PC ColleMctAorXPIMowUeMr DRisAsTipIaNtiGonS AND EL0E.C5 TRICALWCHARACTERISTICS
TJ Ratings at 2J5u℃nctaiomnbTieenmt tpeemrpaeturareture unless otherwis1e5s0pecified. ℃
Single phase half wave, 60Hz, resistive of inductive load.
TstgFor capacitSivteorloaagde, dTeermatpeecruartruernet by 20%
-55~150
℃
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
Marking Code
12 13
14 15
ELEMCaTximRuImCAReLcuCrreHntAPReaAk CReTveErsReIVSoTltaIgCeS(Ta=
Maximum RMS Voltage
25℃VVRRuMRnMS less21o04therw32i01se
spe4208cified53) 05
16
60
42
18 10
115 120
80 100 150 200
56 70
105 140
MaximumPDaCraBmlocektinegr Voltage
SymboVlDC
Maximum Average Forward Rectified Current
C ollector-base breakdown voltage
IO
V(BR)CB O
ColPleeacktoFor-rweamrditStuerrgebCreurarekndt o8.w3 mnsvsoinlgtaleghealf sine-wVav(eBR)CEIFOSM
superimposed on rated load (JEDEC method)
EmTitytpeicr-abl TahseermbarleRaeksdisotawncne v(Nooltteag2)e
V(BR)ERBOΘJA
ColTleypcitcoalrJcuunctt-ionffCcauprarceitanntce (Note 1)
ICBO CJ
ColOlepcetraotrincguTte-mopffercauturrreeRnatnge
Storage Temperature Range
E mitter cut-off current
ICEO TJ
TSTG
IEBO
T2e0st con3d0itions 40
IC = 100μA, IE=0
IC = 10mA, IB=0
IE= 100μA, IC =0
VCB= 40V, IE =0
VCE= 30V-5,5IBto=0+125
VEB= 6V, IC=0
5M0 in
40
30
6
60 Typ
1.0
30
80
Max100
Unit150
V
V
40
120
- 65 to +175
V
1 µA
-5150to +150 µA
1 µA
200
CHARACTERISTICS
hFES(1Y) MBOL FVMC1E2=0-2MVH, FICM=1310-AMH FM140-MH FM15600-MH FM160-MH FM180-MH4F0M01100-MH FM1150-MH FM1200-MH
DCMcauxrimreunmtFgoarwinard Voltage at 1.0A DC
hFE(2)VF
Maximum Average Reverse Current at @T
ColRleactetdoDr-CemBloitctkeinrgsVaotlutargaetion voltage@T
AA==12255℃℃VCE(sat)IR
VCE=2V, IC= 1000m.50A
IC= 2A, IB= 0.2 A
320.70
0.5
10
0.85
0.5
0.9
V
0.92
B ase-emitter saturation voltage
NOTES:
VBE(sat)
IC= 2A, IB= 0.2 A
1.5 V
Tra1n- sMietaiosunrefdreatq1uMeHnZcyand applied reverse voltage of 4.0 VfDT C.
2- Thermal Resistance From Junction to Ambient
VCE= 5V , Ic=0.1A
f =10MHz
50
MHz
CLASSIFICATION OF hFE(1)
Rank
R
20R1a2n-0g6e
60-120
O
100-200
Y
160-320
GR
WILLAS20E0L-4E0C0TRONIC COR
2012-0
WILLAS ELECTRONIC CORP.