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Teilenummer | H5N5005PL |
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Beschreibung | Silicon N-Channel MOS FET | |
Hersteller | Renesas | |
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Gesamt 7 Seiten H5N5005PL
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance: RDS(on) = 0.070 Ω typ.
• Low leakage current: IDSS = 10 µA max (at VDS = 500 V)
• High speed switching: tf = 300 ns typ (at VGS = 10 V, ID = 30 A, RL = 8.33 Ω)
• Low gate charge: Qg = 300 nC typ (at VDD = 400 V, VGS = 10 V, ID = 60 A)
• Avalanche ratings
• Built-in fast recovery diode: trr = 220 ns typ
Outline
RENESAS Package code: PRSS0004ZF-A
(Package name: TO-3PL)
D
REJ03G0419-0400
Rev.4.00
May 13, 2009
1
2
3
G
Absolute Maximum Ratings
Item
Drain to Source voltage
Gate to Source voltage
Drain current
Drain peak current
Body-Drain diode reverse Drain current
Body-Drain diode reverse Drain peak current
Avalanche current
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. STch = 25°C, Tch ≤ 150°C
Symbol
VDSS
VGSS
ID
ID (pulse) Note1
IDR
IDR (pulse) Note1
IAP Note3
Pch Note2
θch-c
Tch
Tstg
1. Gate
2. Drain (Flange)
3. Source
S
Ratings
500
±30
60
240
60
240
30
270
0.463
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
W
°C/W
°C
°C
REJ03G0419-0400 Rev.4.00 May 13, 2009
Page 1 of 6
H5N5005PL
Package Dimensions
Package Name
TO-3PL
JEITA Package Code
RENESAS Code
PRSS0004ZF-A
Previous Code
TO-3PL / TO-3PLV
MASS[Typ.]
9.9g
20.0 ± 0.3
φ3.3 ± 0.2
5.0 ± 0.2
5.45 ± 0.5
1.4
3.0
2.2
1.2
+0.25
–0.1
5.45 ± 0.5
0.6
+0.25
–0.1
1.0
2.8 ± 0.2
3.8
7.4
Unit: mm
Ordering Information
Part Name
H5N5005PL-E
Quantity
250 pcs
Box (Tube)
Shipping Container
REJ03G0419-0400 Rev.4.00 May 13, 2009
Page 6 of 6
6 Page | ||
Seiten | Gesamt 7 Seiten | |
PDF Download | [ H5N5005PL Schematic.PDF ] |
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