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PDF FS30ASJ-06F Data sheet ( Hoja de datos )

Número de pieza FS30ASJ-06F
Descripción N-channel Power MOS FET
Fabricantes Renesas 
Logotipo Renesas Logotipo



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FS30ASJ-06F
High-Speed Switching Use
Nch Power MOS FET
Features
Drive voltage : 4 V
VDSS : 60 V
rDS(ON) (max) : 22 m
ID : 30 A
Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 50 ns
Outline
RENESAS Package code: PRSS0004ZG-A
(Package name: MP-3A)
2, 4
4
12 3
1
3
Applications
Motor control, lamp control, solenoid control, DC-DC converters, etc.
Maximum Ratings
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Mass
Symbol
VDSS
VGSS
ID
IDM
IDA
IS
ISM
PD
Tch
Tstg
Ratings
60
±20
30
120
30
30
120
50
– 55 to +150
– 55 to +150
0.32
REJ03G0242-0200
Rev.2.00
Dec 19, 2008
1. Gate
2. Drain
3. Source
4. Drain
Unit
V
V
A
A
A
A
A
W
°C
°C
g
(Tc = 25°C)
Conditions
VGS = 0 V
VDS = 0 V
L = 10 µH
Typical value
REJ03G0242-0200 Rev.2.00 Dec 19, 2008
Page 1 of 6

1 page




FS30ASJ-06F pdf
FS30ASJ-06F
On-State Resistance vs.
Channel Temperature (Typical)
101
7 VGS = 10V
5
4
ID = 15A
Pulse Test
3
2
100
7
5
4
3
2
10–1
–50
0
50 100 150
Channel Temperature Tch (°C)
Breakdown Voltage vs.
Channel Temperature (Typical)
1.4
VGS = 0V
ID = 1mA
1.2
1.0
0.8
0.6
0.4
–50
0
50 100 150
Channel Temperature Tch (°C)
Threshold Voltage vs.
Channel Temperature (Typical)
4.0
VDS = 10V
ID = 1mA
3.2
2.4
1.6
0.8
0
–50
0
50 100 150
Channel Temperature Tch (°C)
Transient Thermal Impedance Characteristics
101
7
5
3 D = 1.0
2 0.5
100 0.2
7
5 0.1
3 0.05
2
0.02
0.01
Single Pulse
10 –1
10–4 2 3 5 7 10–3 2 3
5 7 10–2 2 3
PDM
tw
T
D
=
tw
T
5 7 10–1 2 3 5 7 100
Pulse Width tw (s)
Switching Time Measurement Circuit
Vin Monitor
RGEN
D.U.T.
Vout
Monitor
RL
RGS
VDD
Switching Waveform
90%
Vin
Vout
10%
10%
10%
td(on)
90%
tr
90%
td(off)
tf
REJ03G0242-0200 Rev.2.00 Dec 19, 2008
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