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S-LP3401LT1G Schematic ( PDF Datasheet ) - LRC

Teilenummer S-LP3401LT1G
Beschreibung P-Channel Enhancement-Mode MOSFET
Hersteller LRC
Logo LRC Logo 




Gesamt 5 Seiten
S-LP3401LT1G Datasheet, Funktion
LESHAN RADIO COMPANY, LTD.
30V P-Channel Enhancement-Mode MOSFET
LP3401LT1G
S-LP3401LT1G
VDS (V) = -30V
RDS(ON) < 70m(VGS = -10V)
RDS(ON) < 80m(VGS = -4.5V)
RDS(ON) < 120m(VGS = -2.5V)
FEATURES
Advanced trench process technology
High Density Cell Design For Ultra Low On-Resistance
S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
ORDERING INFORMATION
Device
LP3401LT1G
S-LP3401LT1G
LP3401LT3G
S-LP3401LT3G
Marking
A1
A1
Shipping
3000/Tape&Reel
10000/Tape&Reel
3
1
2
SOT– 23 (TO–236AB)
3D
G
1
S
2
MAXIMUM RATINGS (TA = 25oC unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
TA=25°C
Power Dissipation A TA=70°C
Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
PD
TJ, TSTG
Maximum
-30
±12
-4.2
-3.5
-30
1.4
1
-55 to 150
Units
V
V
A
W
°C
THERMAL CHARACTERISTICS (TA = 25oC unless otherwise noted)
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
65
85
43
Max
90
125
60
Units
°C/W
°C/W
°C/W
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
Rev .O 1/5





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