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PDF LP2301BLT1G Data sheet ( Hoja de datos )

Número de pieza LP2301BLT1G
Descripción P-Channel Enhancement-Mode MOSFET
Fabricantes LRC 
Logotipo LRC Logotipo



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No Preview Available ! LP2301BLT1G Hoja de datos, Descripción, Manual

LESHAN RADIO COMPANY, LTD.
20V P-Channel Enhancement-Mode MOSFET
VDS= -20V
Features
Advanced trench process technology
High Density Cell Design For Ultra Low On-Resistance
Fully Characterized Avalanche Voltage and Current
Improved Shoot-Through FOM
we declare that the material of product
compliance with RoHS requirements.
Simple Drive Requirement
Small Package Outline
Surface Mount Device
Ordering Information
Device
Marking
LP2301BLT1G
0B
Shipping
3000/Tape & Reel
LP2301BLT3G
0B
10,000/Tape & Reel
LP2301BLT1G
3
1
2
SOT– 23 (TO–236AB)
3D
G
1
S
2
Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
ID
Pulsed Drain Current 1)
Maximum Power Dissipation
TA = 25oC
TA = 75oC
IDM
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
Junction-to-Case Thermal Resistance
Junction-to-Ambient Thermal Resistance (PCB mounted) 2)
Note: 1. Repetitive Rating: Pulse width limited by the Maximum junction temperation
2. 1-in2 2oz Cu PCB board
3. Guaranteed by design; not subject to production testing
RqJC
RqJA
Limit
-20
±8
-2.8
-8
0.9
0.57
-55 to 150
140
Unit
V
A
W
oC
oC/W
Rev .O 1/5

1 page




LP2301BLT1G pdf
LESHAN RADIO COMPANY, LTD.
LP2301BLT1G
A
L
3
BS
12
VG
C
D
H
K
SOT-23
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M,1982
2. CONTROLLING DIMENSION: INCH.
DIM
INCHES
MILLIMETERS
MIN MAX MIN MAX
A 0.1102 0.1197 2.80 3.04
B 0.0472 0.0551 1.20 1.40
C 0.0350 0.0440 0.89 1.11
D 0.0150 0.0200 0.37 0.50
G 0.0701 0.0807 1.78 2.04
H 0.0005 0.0040 0.013 0.100
J 0.0034 0.0070 0.085 0.177
K 0.0140 0.0285 0.35 0.69
J L 0.0350 0.0401 0.89 1.02
S 0.0830 0.1039 2.10 2.64
V 0.0177 0.0236 0.45 0.60
0.037
0.95
0.035
0.9
0.037
0.95
0.079
2.0
0.031
0.8
inches
mm
Rev .O 5/5

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