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Teilenummer | CBR25-020P |
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Beschreibung | SILICON BRIDGE RECTIFIERS | |
Hersteller | Central Semiconductor | |
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Gesamt 2 Seiten CBR25-010P SERIES
SILICON BRIDGE RECTIFIERS
25 AMP, 100 THRU 1000 VOLT
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CBR25-010P series
devices are silicon, single phase, full wave bridge rectifiers
designed for general purpose applications. The molded
epoxy case has a built-in metal baseplate for heat sink
mounting. The device utilizes standard 0.25” FASTON
terminals.
CASE FP
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: (TA=25°C unless otherwise noted)
SYMBOL -010P
Peak Repetitive Reverse Voltage
VRRM 100
DC Blocking Voltage
VR 100
RMS Reverse Voltage
VR(RMS) 70
Average Forward Current (TC=60°C)
IO
Peak Forward Surge Current
IFSM
I2t Rating for Fusing (1ms<t<8.3ms)
I2t
-020P
200
200
140
RMS Isolation Voltage (case to lead)
Operating and Storage
Junction Temperature
Thermal Resistance
Viso
TJ, Tstg
ΘJC
CBR25
-040P -060P
400 600
400 600
280 420
25
350
375
2500
-65 to +150
1.9
-080P
800
800
560
-100P
1000
1000
700
UNITS
V
V
V
A
A
A2s
Vac
°C
°C/W
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
TYP MAX
IR VR=Rated VRRM
10
IR VR=Rated VRRM, TA=125°C
500
VF IF=12.5A
1.2
CJ VR=4.0V, f=1.0MHz
300
UNITS
μA
μA
V
pF
R3 (24-June 2013)
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Seiten | Gesamt 2 Seiten | |
PDF Download | [ CBR25-020P Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
CBR25-020 | Diode ( Rectifier ) | American Microsemiconductor |
CBR25-020P | SILICON BRIDGE RECTIFIERS | Central Semiconductor |
CBR25-020P | Diode ( Rectifier ) | American Microsemiconductor |
CBR25-020PW | Diode ( Rectifier ) | American Microsemiconductor |
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www.Datenblatt-PDF.com | 2020 | Kontakt | Suche |