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PDF BAV20 Data sheet ( Hoja de datos )
| Número de pieza | BAV20 | |
| Descripción | High Voltage Switching Diode | |
| Fabricantes | Taiwan Semiconductor | |
| Logotipo |  |
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Small Signal Product
BAV19 / BAV20 / BAV21
Taiwan Semiconductor
High Voltage Switching Diode
FEATURES
- Fast switching device (trr<4.0ns)
- Through-hole device type mounting
- Hermetically sealed glasss
- Solder hot dip tin (Sn) lead finish
- All external surfaces are corrosion resistant and
leads are readily solderable
- Packing code with suffix "G" means
Halogen free
MECHANICAL DATA
- Case: DO-35 package
- High temperature soldering guaranteed: 260oC/10s
- Polarity: Indicated by black cathode band
- Weight: 109 ± 4 mg
DO-35
Hermetically Sealed Glass
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted)
PARAMETER
SYMBOL
VALUE
Power Dissipation
Peak Forward Surge
Current
Pulse Width = 1 s , Square Wave
Pulse Width = 1 μs , Square Wave
PD
IFSM
500
1
4
Average Forward Current
Thermal Resistance (Junction to Ambient)
Junction and Storage Temperature Range
IO
RθJA
TJ , TSTG
200
300
-65 to +200
PARAMETER
BAV19
Reverse Breakdown Voltage
BAV20
IR = 100 μA
BAV21
Forward Voltage
Reverse Leakage Current
Junction Capacitance
IF = 100 mA
IF = 200 mA
BAV19
VR = 100 V
BAV20
VR = 150 V
BAV21
VR = 200 V
VR = 0 , f = 1.0 MHz
Reverse Recovery Time
(Note 1)
Note 1: Test condition : IF= IR= 30mA , RL=100Ω , IRR=3mA
SYMBOL
V(BR)
VF
IR
CJ
trr
MIN
120
200
250
-
-
-
-
-
MAX
-
-
-
1.00
1.25
100
5
50
UNIT
mW
A
mA
oC/W
oC
UNIT
V
V
nA
pF
ns
Document Number: DS_S1412015
Version: D14
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet BAV20.PDF ] | |
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