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PDF B772 Data sheet ( Hoja de datos )
| Número de pieza | B772 | |
| Descripción | Plastic-Encapsulate Transistors | |
| Fabricantes | WILLAS | |
| Logotipo |  |
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1. B772  Hay una vista previa y un enlace de descarga de B772 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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WILLAS
SOT-89 Plastic-Encapsulate Transistors
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
FM120-M
B772 THRU
FM1200-M
Pb Free Produ
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
TRANSISTO• RLoop（wtimPpioNzwePeb）rolaorsds,shpiagchee. fficiency.
FEATURES••
High
High
current capability,
surge capability.
low
forward
voltage
drop.
Low speed• sGwuaitrcdhriinnggfor overvoltage protection.
Pb-Free pa••cSUkilltaircagohneigeihps-itsaapxeviaealdiplslaawnbitaclrehcinhgip. , metal silicon junction.
RoHS prod•uLcetafdo-rfrepeapcakritns gmeceot denevisrounfmfixen”tGal”standards of
MIL-STD-19500 /228
Halogen fre•eRopHrSopdruodcutctfoforr ppaacckikngincgodceosdufefixs"Gu"ffix “H”
Halogen free product for packing code suffix "H"
Mechanical data
MAXIMUM• REpAoTxyIN: UGLS94(-TVa0=r2a5te℃d fluamnleersestarodtahnet rwise noted)
Symbol
•
•
Case : Molded Pplaarsatmic,eSteOrD-123H
Terminals :Plated terminals, solderable
per
Value Uni,t
MIL-STD-750
VCBO
Collector-BMaestehoVdo2lt0a2g6e
-40 V
VCEO
• PCoolallreitcyto: rI-nEdmiciattteerdVboyltcaagtehode band
-30 V
VEBO
• MEomuintteinr-gBPaosseitVioonlt:aAgney
-5 V
IC • WCeoilglehct t:oArpCpurorrxeimnta-tCeodn0t.i0n1u1ougsram
-3 A
Package outline
SOT-89
1. BASE
SOD-123H
0.146(3.7)
0.130(3.3)
123
2. COLLETOR
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
3. EMITTER
0.031(0.8) Typ.
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
PC CollecMtoAr XPIoMwUerMDiRssAipTaItNioGn S AND ELECT0R.5ICAL CWHARACTERISTICS
RӨJARatings atT2h5e℃rmaalmRbeiseinsttatnecmep,ejurantcutrioenutnoleAsmsboitehnetrwise sp2ec5i0fied. ℃ /W
Tj Single phaJsuenhcatilof nwaTveem, 6p0eHrazt,urreesistive of inductive load. 150
℃
Tstg For capacSititvoeralogaed,Tdeemrapteercautrurreent by 20%
-55~150 ℃
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-
Marking Code
12 13 14 15
ELECTMRaxIimCuAmLReCcuHrrAenRt PAeCakTREevRerIsSeTVIoCltaSge(Ta=25℃ uVRnRlMess o2t0herwis30e spec4i0fied) 50
16
60
18 10
115 120
80 100 150 200
Maximum RMS Voltage
VRMS
14
21
28
MaximumPaDrCamBloectkeinrg Voltage
Symbol
VDC
Te2s0t cond3i0tions 40
ColleMcatxoimr-ubmasAevebrargeeaFkodrwoawrdnRveoctlitfaiegdeCurrent V(BR)CBO IO IC=-100μA ,IE=0
35 42
56 70
105
M50in 6T0 yp 80Max 100Unit 150
-40 1.0
V
140
200
Co llector-emitter breakdown voltage
Peak Forward Surge Current 8.3 ms single half
sinVe-(wBRa)vCeEO
IFSM
Emitstuepre-rbimapsoesebdroenaraktdedolwoand (vJoEDltEaCgemethod) V(BR)EBO
IC= -10mA , IB=0
IE= -100μA,IC=0
-30
30
-5
V
V
ColleTcyptoicralcTuhte-romfaflcRuersrisetanntce (Note 2)
ColleTcyptoicralcJuunt-cotioffncCuarpraecnitatnce (Note 1)
Operating Temperature Range
ICBO
RΘJA VCB= -40V, IE= 0
ICEO
CJ
TJ
VCE=-30V-,5I5B=to0+125
40
120
-1 μA
-10-55 to +15μ0A
EmitStetorracguetT-oemffpceurartruerenRt ange
IEBO TSTG VEB=-6V, IC=0
- 65 to +175 -1
μA
DC current gain
hFE VCE= -2V, IC= -1A 60
400
CHARACTERISTICS
ColleMcatxoimr-uemmFiottrwerarsdaVtoultraagteioant 1v.0oAltDaCge
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
VCE(sat) VF IC=-2A, IB= -0.2A0.50
0.70
-00.5.85
V 0.9
0.92
BaseM-aexmimiuttmerAsveartaugreaRtieovnersveoCltuargreent at @T A=V25B℃E(sat)
Rated DC Blocking Voltage
@T A=125℃
Tra nsition frequency
NOTES:
fT
IR IC=-2A, IB= -0.2A
VCE= -5V, IC=-0.1A
f =10MHz
0.5 -1.5
10
80
V
MHz
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
CLAS SIFICATION OF hFE
Rank
R
O
Y GR
Range
60-120
100-200
160-320
200-400
2012-06
2012-0
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet B772.PDF ] | |
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