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PDF MTBA6C15J4 Data sheet ( Hoja de datos )
| Número de pieza | MTBA6C15J4 | |
| Descripción | N & P-Channel Enhancement Mode Power MOSFET | |
| Fabricantes | CYStech | |
| Logotipo |  |
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CYStech Electronics Corp.
Spec. No. : C938J4
Issued Date : 2014.10.15
Revised Date : 2014.10.28
Page No. : 1/13
N & P-Channel Enhancement Mode Power MOSFET
MTBA6C15J4
BVDSS
ID @VGS=10V(-10V)
Features
• Low gate charge
• Simple drive requirement
• Pb-free lead plating and halogen-free package
RDSON(TYP)@VGS=10V(-10V)
RDSON(TYP)@VGS=4.5V(-4.5V)
N-CH
150V
9.3A
167mΩ
172mΩ
P-CH
-150V
-7.1A
253mΩ
273mΩ
Equivalent Circuit
MTBA6C15J4
Outline
TO-252-4L
G：Gate D：Drain S：Source
Absolute Maximum Ratings (TA=25°C, unless otherwise noted)
Parameter
Symbol
Limits
N-channel P-channel
Drain-Source Voltage
VDS 150
-150
Gate-Source Voltage
VGS ±20
±20
Continuous Drain Current @ TC=25°C, VGS=10V(-10V) (Note1)
Continuous Drain Current @ TC=100°C, VGS=10V(-10V) (Note1)
ID
9.3
6.6
-7.1
-5.0
Continuous Drain Current @ TA=25°C, VGS=10V(-10V) (Note2)
Continuous Drain Current @ TA=70°C, VGS=10V(-10V) (Note2)
IDSM
2
1.7
-1.5
-1.3
Pulsed Drain Current *1
(Note3) IDM
20
-20
Total Power Dissipation (TC=25℃)
Total Power Dissipation (TC=100℃)
(Note1)
(Note1)
PD
37.5
18.7
Total Power Dissipation (TA=25℃)
Total Power Dissipation (TA=70℃)
(Note2)
(Note2)
PDSM
2.4
1.7
Operating Junction and Storage Temperature Range
Tj, Tstg
-55~+175
Note : *1. Pulse width limited by maximum junction temperature
*2. Duty cycle ≤ 1%
Unit
V
A
W
°C
MTBA6C15J4
CYStek Product Specification
1 page  
CYStech Electronics Corp.
Spec. No. : C938J4
Issued Date : 2014.10.15
Revised Date : 2014.10.28
Page No. : 5/13
Q1, N-CH Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
1000
1.4
Threshold Voltage vs Junction Tempearture
1.2
Ciss
1
ID=1mA
100 C oss 0.8
10
0.1
Crss
1 10
VDS, Drain-Source Voltage(V)
100
Forward Transfer Admittance vs Drain Current
100
10
1
VDS=10V
0.1 Pulsed
Ta=25°C
0.01
0.001
0.01 0.1
1
ID, Drain Current(A)
10
Maximum Safe Operating Area
100
RDS(ON)
10 Limit
0.6 ID=250μA
0.4
-75 -50 -25 0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
VDS=120V
8
VDS=75V
6
4
2
ID=2.5A
0
0 2 4 6 8 10 12 14
Qg, Total Gate Charge(nC)
Maximum Drain Current vs Junction Temperature
2.5
2
1
0.1
0.01 TA=25°C, Tj=175°C, VGS=10V
RθJA=90°C/W,Single Pulse
100μs
1ms
10ms
100ms
1s
DC
0.001
0.1
1 10 100
VDS, Drain-Source Voltage(V)
1000
1.5
1
0.5 TA=25°C, VGS=10V
RθJA=90°C/W
0
25 50 75 100 125 150
TJ, Junction Temperature(°C)
175
MTBA6C15J4
CYStek Product Specification
5 Page 
CYStech Electronics Corp.
Recommended soldering footprint
Spec. No. : C938J4
Issued Date : 2014.10.15
Revised Date : 2014.10.28
Page No. : 11/13
Unit : mm
MTBA6C15J4
CYStek Product Specification
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet MTBA6C15J4.PDF ] | |
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