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PDF MTB1D7N03ATH8 Data sheet ( Hoja de datos )
| Número de pieza | MTB1D7N03ATH8 | |
| Descripción | N-Channel Enhancement Mode Power MOSFET | |
| Fabricantes | CYStech | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MTB1D7N03ATH8 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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CYStech Electronics Corp.
Spec. No. : C948H8
Issued Date : 2014.06.06
Revised Date :
Page No. : 1/9
N-Channel Logic Level Enhancement Mode Power MOSFET
MTB1D7N03ATH8
Features
• Single Drive Requirement
• Low On-resistance
• Fast Switching Characteristic
• Dynamic dv/dt rating
• Pb-free lead plating and Halogen-free package
BVDSS
ID @VGS=10V
RDS(ON)@VGS=10V, ID=30A
RDS(ON)@VGS=4.5V, ID=20A
30V
90A
1.5 mΩ(typ)
2.1 mΩ(typ)
Symbol
MTB1D7N03ATH8
Outline
Pin 1
DFN5×6
G：Gate D：Drain S：Source
Ordering Information
Device
MTB1D7N03ATH8-0-T6-G
Package
DFN 5 ×6
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTB1D7N03ATH8
CYStek Product Specification
1 page  
CYStech Electronics Corp.
Spec. No. : C948H8
Issued Date : 2014.06.06
Revised Date :
Page No. : 5/9
Typical Characteristics(Cont.)
10000
Capacitance vs Drain-to-Source Voltage
Threshold Voltage vs Junction Tempearture
1.4
1000
Ciss
C oss
Crss
1.2
1
0.8
0.6
ID=1mA
ID=250μA
100
0.1
1 10
VDS, Drain-Source Voltage(V)
100
Forward Transfer Admittance vs Drain Current
100
10
1
0.1
0.01
0.001
VDS=5V
Pulsed
Ta=25°C
0.01 0.1
1
10
ID, Drain Current(A)
100
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
VDS=15V
8 ID=15A
6
4
2
0
0 10 20 30 40 50 60
Total Gate Charge---Qg(nC)
Maximum Safe Operating Area
1000
100 RDS(ON)
Limit
10
TC=25°C, Tj=150°C,
1 VGS=10V, RθJC=2.5°C/W
Single Pulse
0.1
0.01
0.1 1
10
VDS, Drain-Source Voltage(V)
100μ s
1ms
10ms
100ms
1s
DC
100
Maximum Drain Current vs Case Temperature
120
100
80
60
40
20
VGS=10V, RθJC=2.5°C/W
0
25 50 75 100 125
TC, Case Temperature(°C)
150
175
MTB1D7N03ATH8
CYStek Product Specification
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet MTB1D7N03ATH8.PDF ] | |
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