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Teilenummer | 2SD2118 |
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Beschreibung | NPN Transistor | |
Hersteller | WEJ | |
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Gesamt 2 Seiten RoHS
2SD2118
2SD2118 TRANSISTOR (NPN)
DFEATURES
Power dissipation
TPCM:
1 W (Tamb=25℃)
.,LCollector current
ICM: 5
Collector-base voltage
A
OV(BR)CBO:
50 V
Operating and storage junction temperature range
CTJ, Tstg: -55℃ to +150℃
TO-252-2
1. BASE
2. 30¡ À0. 10
6. 50¡ À0. 15
5. 30¡ À0. 10
0. 51¡ À0. 05
2. 30¡ À0. 10
1. 20
0. 51¡ À0. 10
0¡ «0. 10
5¡ ã
5¡ ã
5¡ ã
0. 80¡ À0. 10
0. 60¡ À0. 10
2. 30¡ À0. 10
0¡¡ ã9«¡ ã
0. 51
2. COLLECTOR
3. EMITTER
ICELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
NCollector-base breakdown voltage
Collector-emitter breakdown voltage
OEmitter-base breakdown voltage
RCollector cut-off current
TEmitter cut-off current
CDC current gain
ECollector-emitter saturation voltage
Transition frequency
LCollector output capacitance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
VCE(sat)
fT
Cob
Test conditions
Ic=50µA, IE=0
Ic=1mA, IB=0
IE=50µA, IC=0
VCB=40V, IE=0
VEB=5V, IC=0
VCE=2V, IC=500mA
IC=4A, IB=100mA
VCE=6V, IC=50mA, f=100MHz
VCB=20V, IE=0, f=1MHz
MIN TYP MAX UNIT
50 V
20 V
6V
0.5 µA
0.5 µA
120 390
1V
150 MHz
30 pF
ECLASSIFICATION OF hFE(1)
JRank
ERange
WMarking
Q
120-270
R
180-390
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Seiten | Gesamt 2 Seiten | |
PDF Download | [ 2SD2118 Schematic.PDF ] |
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