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PDF 8550SST Data sheet ( Hoja de datos )
| Número de pieza | 8550SST | |
| Descripción | NPN Plastic Encapsulated Transistor | |
| Fabricantes | SeCoS | |
| Logotipo |  |
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Elektronische Bauelemente
8550SST
-1.5A , -40V
PNP Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
General Purpose Switching and Amplification.
CLASSIFICATION OF hFE (1)
Product-Rank 8550SST-B 8550SST-C
Range
85~160
120~200
8550SST-D
160~300
TO-92
GH
J
AD
B
K
E CF
Emitter
Collector
Base
REF.
A
B
C
D
E
F
G
H
J
K
Millimeter
Min. Max.
4.40 4.70
4.30 4.70
12.70
-
3.30 3.81
0.36 0.56
0.36 0.51
1.27 TYP.
1.10
-
2.42 2.66
0.36 0.76
Collector
Base
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Rating
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal Resistance From Junction to Ambient
Junction, Storage Temperature
VCBO
VCEO
VEBO
IC
PC
RθJA
TJ, TSTG
-40
-25
-5
-1.5
1
125
150, -55~150
Emitter
Unit
V
V
V
A
W
°C / W
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector to Emitter Saturation Voltage
Base to Emitter Saturation Voltage
Transition Frequency
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
hFE (1)
hFE (2)
VCE(sat)
VBE(sat)
fT
Min
-40
-25
-5
-
-
-
85
40
-
-
100
Typ
-
-
-
-
-
-
-
-
-
-
-
Max
-
-
-
-0.1
-0.1
-0.1
300
-
-0.5
-1.2
-
Unit
V
V
V
μA
μA
μA
V
V
MHz
Test condition
IC= -0.1mA, IE=0
IC= -0.1mA, IB=0
IE= -0.1mA, IC=0
VCB= -40V, IE=0
VCE= -20V, IB=0
VEB= -5V, IC=0
VCE= -1V, IC= -100mA
VCE= -1V, IC= -800mA
IC= -800mA, IB= -80mA
IC= -800mA, IB= -80mA
VCE= -10V, IC= -50mA, f=30MHz
http://www.SeCoSGmbH.com/
18-Feb-2011 Rev. B
Any changes of specification will not be informed individually.
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