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VS-10UT10 Schematic ( PDF Datasheet ) - Vishay

Teilenummer VS-10UT10
Beschreibung High Performance Generation 5.0 Schottky Rectifier
Hersteller Vishay
Logo Vishay Logo 




Gesamt 7 Seiten
VS-10UT10 Datasheet, Funktion
www.vishay.com
VS-10UT10, VS-10WT10FN
Vishay Semiconductors
High Performance Generation 5.0 Schottky Rectifier, 10 A
I-PAK (TO-251AA)
Base
cathode
4
D-PAK (TO-252AA)
Base
cathode
4
13
Anode 2 Anode
Cathode
VS-10UT10
2
1 Cathode 3
Anode
Anode
VS-10WT10FN
PRODUCT SUMMARY
Package
IF(AV)
VR
VF at IF
IRM max.
TJ max.
Diode variation
EAS
I-PAK (TO-251AA),
D-PAK (TO-252AA)
10 A
100 V
0.66 V
4 mA at 125 °C
175 °C
Single die
54 mJ
FEATURES
• 175 °C high performance Schottky diode
• Very low forward voltage drop
• Extremely low reverse leakage
• Optimized VF vs. IR trade off for high efficiency
• Increased ruggedness for reverse avalanche
capability
• RBSOA available
• Negligible switching losses
• Submicron trench technology
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified according to JEDEC-JESD47
APPLICATIONS
• High efficiency SMPS
• High frequency switching
• Output rectification
• Reverse battery protection
• Freewheeling
• DC/DC systems
• Increased power density systems
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
VRRM
VF
TJ
10 Apk, TJ = 125 °C (typical)
Range
VALUES
100
0.615
- 55 to 175
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
SYMBOL
VR
TEST CONDITIONS
TJ = 25 °C
VS-10UT10
VS-10WT10FN
100
UNITS
V
V
°C
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average forward current
IF(AV)
Maximum peak one cycle
non-repetitive surge current
IFSM
Non-repetitive avalanche energy
EAS
Repetitive avalanche current
IAR
Note
(1) Measured connecting 2 anode pins
TEST CONDITIONS
50 % duty cycle at TC = 159 °C, rectangular waveform
5 μs sine or 3 μs rect. pulse
10 ms sine or 6 ms rect. pulse
Following any rated load
condition and with rated
VRRM applied (1)
TJ = 25 °C, IAS = 3 A, L = 12 mH
Limited by frequency of operation and time pulse duration
so that TJ < TJ max. IAS at TJ max. as a function of time pulse
(see fig. 8)
VALUES
10
610
110
54
IAS at
TJ max.
UNITS
A
A
mJ
A
Revision: 02-Nov-11
1 Document Number: 94647
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000






VS-10UT10 Datasheet, Funktion
I-PAK - S
DIMENSIONS FOR I-PAK - S in millimeters
E
A
c2
Outline Dimensions
Vishay Semiconductors
b3
E1
4
32
1
ee
SYMBOL
E
L
L4
L5
D
H
b
b2
b3
b4
e
A
c
c2
D1
E1
b2
c b b4
DIMENSIONAL REQUIREMENTS
MIN.
NOM.
MAX.
6.40 6.60 6.70
3.98 4.13 4.28
0.66 0.76 0.86
1.96 2.16 2.36
6.00 6.10 6.20
11.05
11.25
11.45
0.64 0.76 0.88
0.77 0.84 1.14
5.21 5.34 5.46
0.41 0.51 0.61
2.286 BSC
2.20 2.30 2.38
0.40 0.50 0.60
0.40 0.50 0.60
5.30 -
-
4.40 -
-
Document Number: 95024 For technical questions within your region, please contact one of the following:
Revision: 24-May-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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