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PDF RU1Z200Q Data sheet ( Hoja de datos )
| Número de pieza | RU1Z200Q | |
| Descripción | N-Channel Advanced Power MOSFET | |
| Fabricantes | Ruichips | |
| Logotipo |  |
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RU1Z200Q
N-Channel Advanced Power MOSFET
Features
• 150V/200A,
RDS (ON) =5.5mΩ(Typ.)@VGS=10V
• Ultra Low On-Resistance
• Exceptional dv/dt capability
• Fast Switching and Fully Avalanche Rated
• 100% avalanche tested
• 175°C Operating Temperature
• Lead Free and Green Devices Available (RoHS Compliant)
Applications
• High Efficiency Synchronous Rectification in SMPS
• High Speed Power Switching
• Power Supply
Pin Description
G DS
TO247
D
G
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
VGSS
TJ
TSTG
IS
Drain-Source Voltage
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
Mounted on Large Heat Sink
IDP①
300μs Pulse Drain Current Tested
ID② Continuous Drain Current(VGS=10V)
PD Maximum Power Dissipation
RJC Thermal Resistance-Junction to Case
RJA Thermal Resistance-Junction to Ambient
Drain-Source Avalanche Ratings
EAS③
Avalanche Energy, Single Pulsed
S
N-Channel MOSFET
Rating
Unit
TC=25°C
150
±25
175
-55 to 175
200
V
°C
°C
A
TC=25°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
800 A
200
A
141
600
W
300
0.25
°C/W
50 °C/W
900 mJ
Ruichips Semiconductor Co., Ltd
Rev. C– SEP., 2014
1
www.ruichips.com
1 page  
RU1Z200Q
Typical Characteristics
Output Characteristics
280
240 6,8,10V
200
160
120 5V
80
3V
40
0
01234
VDS - Drain-Source Voltage (V)
5
Drain-Source On Resistance
2.5
VGS=10V
IDS=90A
2.0
1.5
1.0
0.5
0.0
-50
TJ=25°C
Rds(on)=5.5mΩ
-25 0 25 50 75 100 125 150
TJ - Junction Temperature (°C)
175
Capacitance
20000
18000
16000
Frequency=1.0MHz
14000
12000
10000
8000
Ciss
6000
4000
2000
0
Crss
1
10
Coss
100
VDS - Drain-Source Voltage (V)
1000
Ruichips Semiconductor Co., Ltd
Rev. C– SEP., 2014
5
Drain-Source On Resistance
30
25
20
15
10
10V
5
0
0 25 50 75 100 125 150 175 200
ID - Drain Current (A)
Source-Drain Diode Forward
100
TJ=175°C
10
1 TJ=25°C
0.1
0.2
0.4 0.6 0.8 1 1.2
VSD - Source-Drain Voltage (V)
1.4
Gate Charge
10
9 VDS=120V
IDS=90A
8
7
6
5
4
3
2
1
0
0 100 200 300 400
QG - Gate Charge (nC)
500
www.ruichips.com
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| PDF Descargar | [ Datasheet RU1Z200Q.PDF ] | |
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