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PDF RU1H35K Data sheet ( Hoja de datos )

Número de pieza RU1H35K
Descripción N-Channel Advanced Power MOSFET
Fabricantes Ruichips 
Logotipo Ruichips Logotipo



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RU1H35K
N-Channel Advanced Power MOSFET
Features
• 100V/40A,
RDS (ON) =21mΩ(Typ.)@VGS=10V
• Super High Dense Cell Design
• 100% avalanche tested
• Lead Free and Green Devices Available (RoHS Compliant)
Pin Description
Applications
• High Speed Power Switching
GDS
TO251
D
G
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
Mounted on Large Heat Sink
IDP
300μs Pulse Drain Current Tested
ID
Continuous Drain Current(VGS=10V)
PD Maximum Power Dissipation
RθJC Thermal Resistance-Junction to Case
RθJA Thermal Resistance-Junction to Ambient
Drain-Source Avalanche Ratings
EAS
Avalanche Energy, Single Pulsed
S
N-Channel MOSFET
Rating
Unit
TC=25°C
100
±25
175
-55 to 175
40
V
°C
°C
A
TC=25°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
160 A
40
A
30
97
W
48
1.55 °C/W
100 °C/W
90 mJ
Ruichips Semiconductor Co., Ltd
Rev. A– APR., 2013
1
www.ruichips.com

1 page




RU1H35K pdf
RU1H35K
Typical Characteristics
Output Characteristics
60
Vgs=8,9,10V
40 6V
5V
20
3V
0
01234
VDS - Drain-Source Voltage (V)
5
Drain-Source On Resistance
2.5
VGS=10V
ID=16A
2.0
1.5
1.0
0.5
0.0
-50
TJ=25°C
Rds(on)=21mΩ
-25 0 25 50 75 100 125
TJ - Junction Temperature (°C)
150
Capacitance
3000
2500
2000
Frequency=1.0MHz
Ciss
1500
1000
500 Coss
Crss
0
1
10
100 1000
VDS - Drain-Source Voltage (V)
Ruichips Semiconductor Co., Ltd
Rev. A– APR., 2013
5
Drain-Source On Resistance
50
40
30
10V
20
10
0
0
100
20 40 60
ID - Drain Current (A)
80
Source-Drain Diode Forward
TJ=175°C
10
1 TJ=25°C
0.1
0.2
0.4 0.6 0.8 1 1.2
VSD - Source-Drain Voltage (V)
1.4
10
9 VDS=80V
IDS=16A
8
Gate Charge
7
6
5
4
3
2
1
0
0
10 20 30 40
QG - Gate Charge (nC)
50
www.ruichips.com

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