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T90RIA10 Schematic ( PDF Datasheet ) - International Rectifier

Teilenummer T90RIA10
Beschreibung MEDIUM POWER PHASE CONTROL THYRISTORS
Hersteller International Rectifier
Logo International Rectifier Logo 




Gesamt 11 Seiten
T90RIA10 Datasheet, Funktion
Bulletin I27105 rev. B 02/02
T..RIA SERIES
MEDIUM POWER PHASE CONTROL THYRISTORS
Features
Electrically isolated base plate
Types up to 1200 VRRM
3500 VRMS isolating voltage
Simplified mechanical designs,
rapid assembly
High surge capability
Large creepage distances
UL E78996 approved
Power Modules
50 A
70 A
90 A
Description
These series of T-modules are inteded for general
purpose applications such as battery chargers,
welders and plating equipment, regulated power
supplies and temperature and speed control circuits.
The semiconductors are electrically isolated from the
metal base, allowing common heatsinks and compact
assemblies to be built.
Major Ratings and Characteristics
Parameters T50RIA T70RIA T90RIA Units
IT(AV)
@ TC
IT(RMS)
ITSM @50Hz
@ 60Hz
50
70
80
1310
1370
70
70
110
1660
1740
90
70
141
1780
1870
A
oC
A
A
A
I2t @ 50Hz 8550
13860 15900 A2s
@60Hz 7800
12650 14500
I2t 85500 138500 159100
VDRM/VRRM
100 to 1200
TJ -40 to 125
A2s
A2s
V
oC
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T90RIA10 Datasheet, Funktion
T..RIA Series
Bulletin I27105 rev. B 02/02
1200
1100
1000
At Any R ated L oad Condition And W ith
R ated V R R M Applied F ollowing S urge.
Initial T J = 125 C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
900
800
700
600 T 50R I A.. S eries
500
1
10 100
Number Of E qual Amplitude H alf Cycle Current P uls es (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
1000
1300
1200
1100
1000
Maximum Non R epetitive S urge Current
Vers us P uls e T rain Duration. Control
Of Conduction May Not B e Maintained.
Initial T J= 125 C
No Voltage R eapplied
R ated V R R MR eapplied
900
800
700
600 T 50R IA.. S eries
500
0.01
0.1
P uls e T rain Duration (s )
1
Fig. 6 - Maximum Non-Repetitive Surge Current
100
T J= 25 C
10 T J = 125 C
T 50R IA.. S eries
1
0.5 1 1.5 2 2.5 3 3.5 4 4.5
Ins tantaneous On-s tate Voltage (V)
Fig. 10 - On-state Voltage Drop Characteristics
100
R ectangular gate puls e
a) R ecommended load line for
rated di/dt : 20V, 30ohms ;
tr=0.5 s , tp>=6 s
b) R ecommended load line for
10 <=30% rated di/dt : 20V, 65ohms
tr=1 s , tp>=6 s
(b)
(a)
(1) P GM = 10W, tp = 5 ms
(2) P GM = 20W, tp = 2 ms
(3) P GM = 50W, tp = 1 ms
(4) P GM = 100W, tp = 500 s
1
VGD
0.1
0 .0 0 1
IGD
0.0 1
(1) (2) (3) (4)
T 50 R IA.. S eries F requency L imited by P G(AV)
0.1 1 10
Ins tantaneous Gate Current (A)
100 1000
Fig. 9 - Gate Characteristics
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