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XF1001-SC Schematic ( PDF Datasheet ) - Mimix Broadband

Teilenummer XF1001-SC
Beschreibung HFET
Hersteller Mimix Broadband
Logo Mimix Broadband Logo 




Gesamt 7 Seiten
XF1001-SC Datasheet, Funktion
DC-6.0 GHz
1.0W Packaged HFET
April 2010 - Rev 05-Apr-10
Features
46.5 dBm OIP3 @ 5.8 GHz
15.5 dB Gain @ 2 GHz
10.0 dB Gain @ 6 GHz
30.0 dBm P1dB
SOT-89 Package
General Description
The XF1001-SC is a high linearity Hetrojunction Field Effect
Transistor (HFET) housed in an industry standard SOT-89
package. Optimum performance is achieved when the
device is biased at a drain voltage of 8V and drain current of
300m. At this bias point, the device is capable of more than
30 dBm of P1dB and OIP3 of more than 46 dBm. The
XF1001-SC is suitable for applications up to 6 GHz where it
has 10 dB of gain.
Typical Performance: 8V, 25 ºC
Parameter
Typical
Units
Frequency (F)
1900
Gain (S21)
15.5
Ourput IP3 (OIP3)
46.5
Output P1dB
30.0
Quiescent Current (Idq) 300
Input Return Loss (S11) -12.5
Output Return Loss (S22) -7.5
Noise Figure (NF)
4.5
5800
10.1
46.5
30.0
300
-22.5
-7.5
5.0
MHz
dB
dBm
dBm
mA
dB
dB
dB
P1dB at 5900 MHz can be improved to over 30 dBm at the expense of gain.
F1001-SC
Functional Block Diagram
Absolute Maximum Ratings
Device Voltage (Vcc)
+9.0 V
Current (Icc)
450 mA
Power Dissipation (PDC)
4.5W
RF Input Power (RFin)
+24 dBm
Junction Temperature
175 ºC
Thermal Resistance
30 ºC/W
Storage Temperature (Tstg)
-55 ºC to +150 ºC
Operating Temperature
-40 ºC to +85 ºC
ESD (HBM)
Class 1A
Moisture Sensitivity Level (MSL) MSL 1
Operation of this device beyond any of these parameters may cause
permanent damage.
Electrical Characteristics (T=25ºC,Vd=8V)
Unless otherwise specified,the following specifications are guaranteed at room temperature in a Mimix test fixture.
Parameter
Condition
Units Min Typ Max
Frequency Range (F)
MHz DC
6000
Test Frequency
MHz 1900
Small Signal Gain (S21)
Externally matched
dB 13.5 15.5
Output Intercept Point (OIP3) Pout/Tone=13 dBm, Spacing=5 MHz dBm +44.0 +46.5
Output P1dB
dBm +29.0 +30.0
Quiescent Current (Icq)
mA 300.0 330.0
Gate Voltage
V -1.2 -0.85 -0.5
Noise Figure (NF)
dB 4.5
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 1 of 7
Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.






XF1001-SC Datasheet, Funktion
DC-6.0 GHz
1.0W Packaged HFET
April 2010 - Rev 05-Apr-10
F1001-SC
App Note [1] Biasing - The XF1001-SC requires power supply sequencing. Negative voltage supply (Vgg) needs to be turned on first and then
positive voltage can be applied to the drain (Vdd). When turning off the device, the positive supply (Vdd) should be turned off first and then
negative voltage (Vgg) can be removed.
The gate voltage is adjusted in order to set the drain current to the desired level.The gate voltage required to achieve a certain current can vary
over temperature and from one device to another due to pinch-off voltage variation. Constant drain current can be achieved by Implementing an
active bias circuit which allows for temperature compensation and eliminates the effect of pinch off voltage variation.
Physical Dimensions
Pin-out Details
Description
RF Input
RF Output
GND
Pin #
1
3
2, 4
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 6 of 7
Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.

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