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Número de pieza | AP0103GP-HF | |
Descripción | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
Fabricantes | Advanced Power Electronics | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de AP0103GP-HF (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
No Preview Available ! Advanced Power
Electronics Corp.
AP0103GP-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
▼ Lower On-resistance
▼ Fast Switching Characteristic
▼ RoHS Compliant & Halogen-Free
G
D
S
Description
AP0103 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The TO-220 package is widely preferred for all commercial-
industrial through hole applications. The low thermal resistance and
low package cost contribute to the worldwide popular package.
BVDSS@Tj=125oC
RDS(ON)
ID
40V
2.99mΩ
220A
G
D
S
TO-220(P)
Absolute Maximum Ratings
Symbol
Parameter
VDS@Tj=125oC
VGS
ID@TC=25℃
ID@TC=25℃
ID@TC=100℃
IDM
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Chip)
Continuous Drain Current, VGS @ 10V3
Continuous Drain Current, VGS @ 10V3
Pulsed Drain Current1
PD@TC=25℃
PD@TA=25℃
TSTG
TJ
Total Power Dissipation
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Rating
40
+20
220
80
80
320
250
2
-55 to 150
-55 to 150
Units
V
V
A
A
A
A
W
W
℃
℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
0.5
62
Units
℃/W
℃/W
1
201304121
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet AP0103GP-HF.PDF ] |
Número de pieza | Descripción | Fabricantes |
AP0103GP-HF | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |
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