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Teilenummer | AP02N90JB |
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Beschreibung | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
Hersteller | Advanced Power Electronics | |
Logo | ||
Gesamt 5 Seiten Advanced Power
Electronics Corp.
AP02N90JB
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ 100% Avalanche Test
▼ Fast Switching Characteristic
▼ Simple Drive Requirement
D
▼ RoHS Compliant & Halogen-Free
G
Description
S
AP02N90 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The TO-251S short lead package is preferred for all commercial-
industrial through-hole applications without lead-cutted.
BVDSS
RDS(ON)
ID
900V
7.2Ω
1.9A
GDS
TO-251S
Absolute Maximum Ratings@Tj=25oC. (unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS Drain-Source Voltage
900 V
VGS
ID@TC=25℃
ID@TC=100℃
IDM
PD@TC=25℃
PD@TA=25℃
EAS
Gate-Source Voltage
Drain Current, VGS @ 10V
Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Total Power Dissipation
Single Pulse Avalanche Energy2
+30 V
1.9 A
1.2 A
6A
62.5 W
1.13 W
18 mJ
IAR
TSTG
TJ
Avalanche Current
Storage Temperature Range
Operating Junction Temperature Range
1.9
-55 to 150
-55 to 150
A
℃
℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
Value
2
110
Units
℃/W
℃/W
1
201505271
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Seiten | Gesamt 5 Seiten | |
PDF Download | [ AP02N90JB Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
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