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PDF AP02N60I-HF Data sheet ( Hoja de datos )
| Número de pieza | AP02N60I-HF | |
| Descripción | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
| Fabricantes | Advanced Power Electronics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de AP02N60I-HF (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
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Advanced Power
Electronics Corp.
AP02N60I-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ 100% Avalanche Test
▼ Fast Switching Characteristic
D
▼ Simple Drive Requirement
▼ RoHS Compliant & Halogen-Free
G
S
Description
AP02N60 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The TO-220CFM package is widely preferred for all commercial-
industrial through hole applications. The mold compound provides
a high isolation voltage capability and low thermal resistance
between the tab and the external heat-sink.
BVDSS
RDS(ON)
ID4
600V
8Ω
2A
G DS
TO-220CFM(I)
Absolute Maximum Ratings@Tj=25o.C(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS
VGS
ID@TC=25℃
ID@TC=100℃
IDM
PD@TC=25℃
EAS
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Drain Current, VGS @ 10V4
Drain Current, VGS @ 10V4
Pulsed Drain Current1
Total Power Dissipation
Single Pulse Avalanche Energy2
Storage Temperature Range
Operating Junction Temperature Range
600
+30
2
1.26
3.6
22
80
-55 to 150
-55 to 150
V
V
A
A
A
W
mJ
℃
℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
Value
5.7
65
Unit
℃/W
℃/W
1
201502255
1 page  
MARKING INFORMATION
AP02N60I-HF
02N60I
YWWSSS
Part Number
Package Code
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
.
5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet AP02N60I-HF.PDF ] | |
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