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Teilenummer | AP01L60T-H-HF |
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Beschreibung | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
Hersteller | Advanced Power Electronics | |
Logo | ||
Gesamt 5 Seiten Advanced Power
Electronics Corp.
AP01L60T-H-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low Gate Charge
▼ Fast Switching Characteristics
▼ Simple Drive Requirement
▼ RoHS Compliant & Halogen-Free
D
G
S
Description
Advanced Power MOSFETs utilized advanced processing techniques to
achieve the lowest possible on-resistance, extremely efficient and cost-
effectiveness device.
The TO-92 package is widely used for all commercial-industrial
applications.
BVDSS
RDS(ON)
ID
G
D
S
700V
13.5Ω
160mA
TO-92
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
.Parameter
Rating
Units
VDS Drain-Source Voltage
700 V
VGS Gate-Source Voltage
+30 V
ID@TA=25℃
Drain Current, VGS @ 10V
160 mA
ID@TA=100℃
IDM
Drain Current, VGS @ 10V
Pulsed Drain Current1
100 mA
300 mA
PD@TA=25℃
Total Power Dissipation
0.83 W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
Value
150
Unit
℃/W
1
201501063
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Seiten | Gesamt 5 Seiten | |
PDF Download | [ AP01L60T-H-HF Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
AP01L60T-H-HF | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |
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