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PDF CMPT6517 Data sheet ( Hoja de datos )
| Número de pieza | CMPT6517 | |
| Descripción | SURFACE MOUNT COMPLEMENTARY HIGH VOLTAGE SILICON TRANSISTORS | |
| Fabricantes | Central Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de CMPT6517 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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CMPT6517 NPN
CMPT6520 PNP
SURFACE MOUNT
COMPLEMENTARY HIGH VOLTAGE
SILICON TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPT6517 and
CMPT6520 are complementary silicon transistors
manufactured by the epitaxial planar process, epoxy
molded in a surface mount package, designed for high
voltage driver and amplifier applications.
MARKING CODES: CMPT6517: C1Z
CMPT6520: C2Z
SOT-23 CASE
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Continuous Base Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
IB
PD
TJ, Tstg
ΘJA
350
350
5.0
500
250
350
-65 to +150
357
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICBO
IEBO
IEBO
BVCBO
BVCEO
BVEBO
BVEBO
VCE(SAT)
VCE(SAT)
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(SAT)
VBE(SAT)
VBE(ON)
hFE
hFE
VCB=250V
VEB=5.0V (CMPT6517)
VEB=4.0V (CMPT6520)
IC=100µA
IC=1.0mA
IE=10µA (CMPT6517)
IE=10µA (CMPT6520)
IC=10mA, IB=1.0mA
IC=20mA, IB=2.0mA
IC=30mA, IB=3.0mA
IC=50mA, IB=5.0mA
IC=10mA, IB=1.0mA
IC=20mA, IB=2.0mA
IC=30mA, IB=3.0mA
IC=10V, IC=100mA
VCE=10V, IC=1.0mA
VCE=10V, IC=10mA
350
350
6.0
5.0
20
30
MAX
50
50
50
0.30
0.35
0.50
1.0
0.75
0.85
0.90
2.0
UNITS
V
V
V
mA
mA
mW
°C
°C/W
UNITS
nA
nA
nA
V
V
V
V
V
V
V
V
V
V
V
V
R5 (1-February 2010)
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet CMPT6517.PDF ] | |
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