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PDF CMPT2907AE Data sheet ( Hoja de datos )
| Número de pieza | CMPT2907AE | |
| Descripción | SURFACE MOUNT PNP SILICON TRANSISTOR | |
| Fabricantes | Central Semiconductor | |
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CMPT2907AE
ENHANCED SPECIFICATION
SURFACE MOUNT
PNP SILICON TRANSISTOR
SOT-23 CASE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPT2907AE
is an Enhanced version of the CMPT2907A PNP
Switching transistor in a SOT-23 surface mount
package, designed for switching applications, interface
circuit and driver circuit applications.
MARKING CODE: C2FE
FEATURED ENHANCED SPECIFICATIONS:
♦ BVCBO from 60V min to 90V min. (115V TYP)
♦ VCE(SAT) from 1.6V max to 0.7V max. (0.280V TYP)
♦ hFE from 50 min to 75 min. (110 TYP)
MAXIMUM RATINGS: (TA=25°C)
♦Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ, Tstg
ΘJA
90
60
5.0
600
350
-65 to +150
357
UNITS
V
V
V
mA
mW
°C
°C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN TYP
ICBO
VCB=50V
ICBO
VCB=50V, TA=125°C
ICEV
♦ BVCBO
VCE=30V, VEB=0.5V
IC=10µA
90 115
BVCEO
IC=10mA
60
BVEBO
♦ VCE(SAT)
♦ VCE(SAT)
IE=10µA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
5.0
0.103
0.280
VBE(SAT) IC=150mA, IB=15mA
VBE(SAT) IC=500mA, IB=50mA
♦ hFE
VCE=10V, IC=0.1mA
100 205
hFE VCE=10V, IC=1.0mA
100
hFE VCE=10V, IC=10mA
100
hFE
♦ hFE
VCE=10V, IC=150mA
VCE=10V, IC=500mA
100
75 110
fT
VCE=20V, IC=50mA, f=100MHz
200
Cob VCB=10V, IE=0, f=1.0MHz
Cib VBE=2.0V, IC=0, f=1.0MHz
♦ Enhanced specification
MAX
10
10
50
0.2
0.7
1.3
2.6
UNITS
nA
µA
nA
V
V
V
V
V
V
V
300
MHz
8.0 pF
30 pF
R2 (1-February 2010)
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet CMPT2907AE.PDF ] | |
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