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Teilenummer | VN0655 |
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Beschreibung | N-Channel Enhancement-Mode Vertical DMOS FETs | |
Hersteller | Supertex | |
Logo | ||
Gesamt 4 Seiten VN0655
VN0660
N-Channel Enhancement-Mode
Vertical DMOS FETs
Ordering Information
BVDSS /
BVDGS
550V
600V
†MIL visual screening available
RDS(ON)
(max)
20Ω
20Ω
Features
s Free from secondary breakdown
s Low power drive requirement
s Ease of paralleling
s Low CISS and fast switching speeds
s Excellent thermal stability
s Integral Source-Drain diode
s High input impedance and high gain
Applications
s Motor controls
s Converters
s Amplifiers
s Switches
s Power supply circuits
s Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
ID(ON)
(min)
0.25A
0.25A
Order Number / Package
TO-92
TO-220
Die†
VN0655N3 — VN0655ND
VN0660N3 VN0660N5 VN0660ND
Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient inher-
ent in MOS devices. Characteristic of all MOS structures, these
devices are free from thermal runaway and thermally-induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Package Options
Absolute Maximum Ratings
Drain-to-Source Voltage
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
Soldering Temperature*
* Distance of 1.6 mm from case for 10 seconds.
BVDSS
BVDGS
± 20V
-55°C to +150°C
300°C
7-179
SGD
TO-92
GDS
TO-220
TAB: DRAIN
Note: See Package Outline section for dimensions.
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Seiten | Gesamt 4 Seiten | |
PDF Download | [ VN0655 Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
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