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Número de pieza | AP2602MT | |
Descripción | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
Fabricantes | Advanced Power Electronics | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de AP2602MT (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! Advanced Power
Electronics Corp.
AP2602MT
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
▼ SO-8 Compatible with Heatsink
D
▼ Ultra Low On-resistance
▼ RoHS Compliant & Halogen-Free
G
Description
S
AP2602 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The PMPAK ® 5x6 package is special for DC-DC converters
application and the foot print is compatible with SO-8 with backside
heat sink and lower profile.
BVDSS
RDS(ON)
ID4
25V
0.99mΩ
260A
D
D
D
D
S
S
S
G
PMPAK® 5x6
Absolute
Symbol
Maximum
RatingPsa@ramTejt=er25o.C(unless
otherwise specified)
Rating
Units
VDS
VGS
ID@TC=25℃
ID@TA=25℃
ID@TA=70℃
IDM
PD@TC=25℃
PD@TA=25℃
EAS
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Chip), VGS @ 10V4
Drain Current, VGS @ 10V3
Drain Current, VGS @ 10V3
Pulsed Drain Current1
Total Power Dissipation
Total Power Dissipation3
Single Pulse Avalanche Energy5
Storage Temperature Range
Operating Junction Temperature Range
25
+20
260
57.3
45.8
650
104
5
45
-55 to 150
-55 to 150
V
V
A
A
A
A
W
W
mJ
℃
℃
Thermal Data
Symbol
Parameter
Rthj-c
Rthj-a
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value
1.2
25
Unit
℃/W
℃/W
1
201501202
1 page AP2602MT
2
I D =1mA
1.6
1.2
0.8
0.4
0
-100 -50 0 50 100 150
T j , Junction Temperature ( o C)
Fig 13. Normalized BVDSS v.s. Junction
Temperature
4
T j =25 o C
3
V GS =3.0V
2
.3.5V
4.0V
4.5V
1 5.0V
V GS =10V
0
0 20 40 60 80 100 120
I D , Drain Current (A)
Fig 15. Typ. Drain-Source on State
Resistance
120
100
80
60
40
20
0
0 50 100
T C , Case Temperature( o C)
Fig 14. Total Power Dissipation
150
5
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet AP2602MT.PDF ] |
Número de pieza | Descripción | Fabricantes |
AP2602MT | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |
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