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CS4N60FA9HD Schematic ( PDF Datasheet ) - Huajing Discrete Devices

Teilenummer CS4N60FA9HD
Beschreibung Silicon N-Channel Power MOSFET
Hersteller Huajing Discrete Devices
Logo Huajing Discrete Devices Logo 




Gesamt 10 Seiten
CS4N60FA9HD Datasheet, Funktion
Huajing Discrete Devices
R
Silicon N-Channel Power MOSFET
CS4N60F A9HD
General Description
CS4N60F A9HD, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
TO-220F, which accords with the RoHS standard.
Features
l Fast Switching
l ESD Improved Capability
l Low Gate Charge (Typical Data: 14.5nC)
l Low Reverse transfer capacitances(Typical: 8.5pF)
l 100% Single Pulse avalanche energy Test
Applications
Power switch circuit of adaptor and charger.
AbsoluteTc= 25unless otherwise specified):
Symbol Parameter
VDSS
ID
IDMa1
VGS
EAS a2
EAR a1
IAR a1
dv/dt a3
PD
VESD(G-S)
TJTstg
TL
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current TC = 100 °C
Pulsed Drain Current
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Energy ,Repetitive
Avalanche Current
Peak Diode Recovery dv/dt
Power Dissipation
Derating Factor above 25°C
Gate source ESD (HBM-C= 100pF, R=1.5kΩ)
Operating Junction and Storage Temperature Range
MaximumTemperature for Soldering
VDSS
ID
PD(TC=25)
RDS(ON)Typ
600
4
30
1.8
Rating
600
4
3.2
16
±30
200
30
2.5
5.0
30
0.24
3000
15055 to 150
300
V
A
W
Units
V
A
A
A
V
mJ
mJ
A
V/ns
W
W/
V
WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 1 of 10 2012






CS4N60FA9HD Datasheet, Funktion
Huajing Discrete Devices
R CS4N60F A9HD
1.15
1.1
1.05
1
0.95
0.9
0.85
0.8
0.75 VGS=0V
0.7 ID=250μA
0.65
-75
Figure
-50 -25 0 25 50 75 100 125 150 175
Tj, Junction temperature , C
11 Typical Theshold Voltage vs Junction Temperature
10000
1000
Ciss
1.1
1.05
1
0.95
VGS=0V
ID=250μA
0.9
-55
Figure
-30 -5 20 45 70 95 120 145 170
Tj, Junction temperature , C
12 Typical Breakdown Voltage vs Junction Temperature
12
VDS=180V
10 VDS=360V
VDS=480V
8
100 Coss 6
10 VGS=0V , f=1MHz
Ciss=Cgs+Cgd
Coss=Cds+Cgd
Crss=Cgd
Crss
1
0.1 1 10 100
Vds , Drain - Source Voltage , Volts
Figure 13 Typical Capacitance vs Drain to Source Voltage
8
7
6
5
4
3 +150
2 +25
1 -55
0
0 0.2 0.4 0.6 0.8 1 1.2
Vsd , Source - Drain Voltage , Volts
Figure 15 Typical Body Diode Transfer Characteristics
4
2
ID=2A
0
0 2 4 6 8 10 12 14 16 18 20
Qg , Total Gate Charge , nC
Figure 14 Typical Gate Charge vs Gate to Source Voltage
100
STARTING Tj = 25
10 STARTING Tj = 150
1
If R=0: tAV=(L* IAS) / (1.38VDSS-VDD)
If R0: tAV=(L/R) In[IAS*R/ (1.38VDSS-VDD)+1]
R equals total Series resistance of Drain circuit
0.1
1.00E-06 1.00E-05 1.00E-04 1.00E-03 1.00E-02 1.00E-01 1.00E+00
tav,Time in Avalanche,Seconds
Figure 16 Unclamped Inductive Switching Capability
WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 6 of 10 2012

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