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PDF VS-10MQ100NPbF Data sheet ( Hoja de datos )
| Número de pieza | VS-10MQ100NPbF | |
| Descripción | High Performance Schottky Rectifier | |
| Fabricantes | Vishay | |
| Logotipo |  |
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www.vishay.com
VS-10MQ100NPbF
Vishay Semiconductors
High Performance Schottky Rectifier, 1 A
DO-214AC (SMA)
Cathode
Anode
PRODUCT SUMMARY
Package
IF(AV)
VR
VF at IF
IRM
TJ max.
Diode variation
EAS
DO-214AC (SMA
1A
100 V
0.78 V
1 mA at 125 °C
150 °C
Single die
1.0 mJ
FEATURES
• Small foot print, surface mountable
• Low forward voltage drop
• High frequency operation
• Guard ring for enhanced ruggedness and long term
reliability
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The VS-10MQ100NPbF surface mount Schottky rectifier
has been designed for applications requiring low forward
drop and very small foot prints on PC boards. Typical
applications are in disk drives, switching power supplies,
converters, freewheeling diodes, battery charging, and
reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF
TJ
Rectangular waveform
tp = 5 μs sine
1.5 Apk, TJ = 125 °C
Range
VALUES
1
100
120
0.68
-55 to +150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
SYMBOL
Maximum DC reverse voltage
Maximum working peak reverse voltage
VR
VRWM
VS-10MQ100NPbF
100
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average forward current
See fig. 4
IF(AV)
Maximum peak one cycle
non-repetitive surge current, TJ = 25 °C
See fig. 6
Non-repetitive avalanche energy
Repetitive avalanche current
IFSM
EAS
IAR
TEST CONDITIONS
50 % duty cycle at TL = 126 °C, rectangular waveform
On PC board 9 mm2 island (0.013 mm thick copper pad area)
50 % duty cycle at TL = 135 °C, rectangular waveform
On PC board 9 mm2 island (0.013 mm thick copper pad area)
5 μs sine or 3 μs rect. pulse
10 ms sine or 6 ms rect. pulse
Following any rated load
condition and with rated
VRRM applied
TJ = 25 °C, IAS = 0.5 A, L = 8 mH
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
VALUES
1.5
1
120
30
1.0
0.5
UNITS
A
A
mJ
A
Revision: 16-Feb-15
1 Document Number: 94119
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
SMA
Outline Dimensions
Vishay Semiconductors
DIMENSIONS in inches (millimeters)
DO-214AC (SMA)
Cathode band
0.065 (1.65)
0.049 (1.25)
0.090 (2.29)
0.078 (1.98)
0.060 (1.52)
0.030 (0.76)
0.177 (4.50)
0.157 (3.99)
0.008 (0.203)
0 (0)
0.208 (5.28)
0.194 (4.93)
0.110 (2.79)
0.100 (2.54)
0.012 (0.305)
0.006 (0.152)
Mounting Pad Layout
0.074 (1.88)
MAX.
0.066 (1.68)
MIN.
0.060 (1.52)
MIN.
0.208 (5.28)
REF.
Document Number: 95400 For technical questions within your region, please contact one of the following:
Revision: 09-Jul-10
www.vishay.com
1
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