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PDF BCW31 Data sheet ( Hoja de datos )
| Número de pieza | BCW31 | |
| Descripción | NPN TRANSISTOR | |
| Fabricantes | WEJ | |
| Logotipo |  |
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RoHS
BCW31
FEATURES
* Low current(100mA)
* Low voltage(32V)
* General purpose swithching and amplification
DABSOLUTE MAXIMUM RATINGS at Ta=25
Characteristic
Symbol Rating Unit
TCollector-Base Voltage
Vcbo 32 V
.,LCollector-Emitter Voltage
Vceo 32 V
Emitter-Base Voltage
Veb 5 V
Collector Current
Ic 100 mA
Collector Dissipation Ta=25 * PD 250 mW
OJunction Temperature
Tj 150
Storage Temperature
Tstg -65-150
CELECTRICAL CHARACTERISTICS at Ta=25
Characteristic
Symbol Min Typ Max
Collector-Base Breakdown Voltage BVcbo 32
ICCollector-Emitter
Breakdown BVceo 32
Voltage#
NEmitter-Base Breakdown Voltage
BVebo 5
OCollector Cutoff Current
Icbo
100
10
Emitter Cutoff Current
Iebo
100
RBase-Emitter Voltage
Vbe 550
700
Collector Capacitance
Cob 2.5
TDC Current Gain
190
Hfe
110 220
ECCollector-Emitter Saturation Voltage Vce(sat)
120 250
210
LBase-Emitter Saturation Voltage
Vbe(sat)
750
850
ETransition Frequency
fT
100
Noise figure
10
F
J* Total Device Dissipation : FR=1X0.75X0.062in Board,Derate 25 .
E# Pulse Test : Pulse Width 300uS,Duty cycle 2%
DEVICE MARKING:
W BCW31=D1t
1.
2.4
1.3
1 . G AT E
2 .SO U RC E R
3.DRAIE
U nit :m m
Unit Test Conditions
V Ic=100uA Ie=0
V Ic= 2mA Ib=0
V Ie= 100uA Ic=0
nA Vcb= 32V Ie=0
uA Vcb=32V Ie=0 Tj=100
nA Veb=5V Ic=0
mV Ic=2mA Vce=5V
pF Ie=0 Vcb=10V f=1MHz
Vce= 5V Ic= 10uA
Vce= 5V Ic= 2mA
Ic= 10mA Ib= 0.5mA
mV
Ic=50mA Ib=2.5mA
Ic= 10mA Ib= 0.5mA
mV
Ic=50mA Ib=2.5mA
Vce=5V Ic=10mA
MHz
f=100MHz
Ic=200uA Vce=5V Rs=2k
dB
F=1kHz B=200Hz
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet BCW31.PDF ] | |
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