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7MBP75TEA120 Schematic ( PDF Datasheet ) - Fuji

Teilenummer 7MBP75TEA120
Beschreibung IGBT ( Insulated-Gate Bipolar Transistor )
Hersteller Fuji
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Gesamt 9 Seiten
7MBP75TEA120 Datasheet, Funktion
7MBP75TEA120
Econo IPM series
1200V / 75A 7 in one-package
Features
· Temperature protection provided by directly detecting the junction
temperature of the IGBTs
· Low power loss and soft switching
· High performance and high reliability IGBT with overheating protection
· Higher reliability because of a big decrease in number of parts in
built-in control circuit
Maximum ratings and characteristics
Absolute maximum ratings(at Tc=25°C unless otherwise specified)
Item
Symbol
Bus voltage
DC
Surge
Short operating
Collector-Emitter voltage *1
Collector current
DC
1ms
DC
Collector power dissipation One transistor *3
Collector current
DC
1ms
Forward current diode
Collector power dissipation One transistor *3
Supply voltage of Pre-Driver *4
Input signal voltage *5
Input signal current
Alarm signal voltage *6
Alarm signal current *7
Junction temperature
Operating case temperature
Storage temperature
Solder temperature *8
Isolating voltage (Terminal to base, 50/60Hz sine wave 1min.)
Screw torque
Mounting (M5)
VDC
VDC(surge)
VSC
VCES
IC
ICP
-IC
PC
IC
ICP
IF
PC
VCC
Vin
Iin
VALM
IALM
Tj
Topr
Tstg
Tsol
Viso
Rating
Min.
Max.
0
0
400
0
-
-
-
-
-
-
-
-
-0.5
-0.5
-
-0.5
-
-
-20
-40
-
-
-
900
1000
800
1200
75
150
75
368
25
50
25
212
20
Vcc+0.5
3
Vcc
20
150
100
125
260
AC2500
3.5
Unit
V
V
V
V
A
A
A
W
A
A
A
W
V
V
mA
V
mA
°C
°C
°C
°C
V
N·m
Note
*1 : Vces shall be applied to the input voltage between terminal P and U or ‚V or W or DB, N and U or V or W or DB
*2 : 125°C/FWD Rth(j-c)/(Ic x VF MAX)=125/0.61/(75 x 2.0) x 100>100%
*3 : Pc=125°C/IGBT Rth(j-c)=125/0.34=368W [Inverter]
Pc=125°C/IGBT Rth(j-c)=125/0.59=212W [Brake]
*4 : VCC shall be applied to the input voltage between terminal No.4 and 1, 8 and 5, 12 and 9, 14 and 13
*5 : Vin shall be applied to the input voltage between terminal No.3 and 1, 7 and 5, 11 and 9, 16,17,18 and 13.
*6 :VALM shall be applied to the voltage between terminal No.2 and 1, No6 and 5, No10 and 9, No.19 and 13.
*7 : IALMshall be applied to the input current to terminal No.2,6,10 and 19.
*8 : Immersion time 10±1sec.






7MBP75TEA120 Datasheet, Funktion
7MBP75TEA120
Main circuit characteristics (Representative)
IGBT-IPM
Collector current vs. Collector-Emitter voltage (typ.) Collector current vs. Collector-Emitter voltage (typ.)
Tj=25°C(Chip)
Tj=25°C(Terminal)
150 150
125 Vcc=15V
100 Vcc=17V
75 Vcc=13V
125 Vcc=15V
100
Vcc=17V
Vcc=13V
75
50 50
25 25
0
0 0.5 1 1.5 2 2.5 3 3.5 4
Collector-Emitter voltage : Vce (V)
0
0 0.5 1 1.5 2 2.5 3 3.5 4
Collector-Emitter voltage : Vce (V)
Collector current vs. Collector-Emitter voltage (typ.) Collector current vs. Collector-Emitter voltage (typ.)
Tj=125°C(Chip)
Tj=125°C(Terminal)
150 150
125
Vcc=15V
125
100 Vcc=17V
100
75
Vcc=13V
75
Vcc=15V
Vcc=17V
Vcc=13V
50 50
25 25
0
0 0.5 1 1.5 2 2.5 3 3.5 4
Collector-Emitter voltage : Vce (V)
Forward current vs. Forward voltage (typ.)
(Chip)
150
0
0 0.5 1 1.5 2 2.5 3 3.5 4
Collector-Emitter voltage : Vce (V)
Forward current vs. Forward voltage (typ.)
(Terminal)
150
125 125
25°C
100
100
125°C
75 75
25°C
125°C
50 50
25 25
0
0 0.5 1 1.5 2 2.5
Forward voltage : Vf (V)
0
0 0.5 1 1.5 2 2.5
Forward voltage : Vf (V)

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