2SK3150L Schematic ( PDF Datasheet ) - Renesas

Teilenummer	2SK3150L
Beschreibung	Silicon N Channel MOS FET
Hersteller	Renesas
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Gesamt 9 Seiten 2SK3150(L), 2SK3150(S) Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS =45 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline REJ03G1075-0400 (Previous: ADE-208-750B) Rev.4.00 Sep 07, 2005 RENESAS Package code: PRSS0004AE-A (Package name: LDPAK(L)) 4 RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1)) 4 G D 12 3 123 S 1. Gate 2. Drain 3. Source 4. Drain Rev.4.00 Sep 07, 2005 page 1 of 8 2SK3150(L), 2SK3150(S) Switching Time Test Circuit Vin Monitor D.U.T. Vout Monitor RL Vin 10 V 50 Ω VDD = 30 V Switching Time Waveforms 90% Vin Vout 10% 10% 10% td(on) 90% tr 90% td(off) tf Rev.4.00 Sep 07, 2005 page 6 of 8 6 Page
Seiten	Gesamt 9 Seiten
PDF Download	[ 2SK3150L Schematic.PDF ]

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Besondere Datenblatt

Teilenummer	Beschreibung	Hersteller
2SK3150	Silicon N Channel MOS FET High Speed Power Switching	Hitachi Semiconductor
2SK3150	Silicon N Channel MOS FET	Renesas
2SK3150L	Silicon N Channel MOS FET High Speed Power Switching	Hitachi Semiconductor
2SK3150L	Silicon N Channel MOS FET	Renesas
2SK3150S	Silicon N Channel MOS FET High Speed Power Switching	Hitachi Semiconductor

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