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PDF SMG5406 Data sheet ( Hoja de datos )
| Número de pieza | SMG5406 | |
| Descripción | N-Channel Enhancement Mode MOSFET | |
| Fabricantes | SeCoS | |
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Elektronische Bauelemente
SMG5406
3.6A , 30V , RDS(ON) 65 m
N-Channel Enhancement Mode MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
The SMG5406 utilized advanced processing
techniques to achieve the lowest possible on-resistance,
extremely efficient and cost-effectiveness device. The
SMG5406 is universally used for all commercial-industrial
applications.
FEATURES
Simple Drive Requirement
Small Package Outline
MARKING
5406
PACKAGE INFORMATION
Package
MPQ
SC-59
3K
Leader Size
7 inch
SC-59
A
L
3
Top View
CB
12
KE
1
D
F GH
3
2
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.25 3.00
1.30 1.70
1.00 1.40
1.70 2.30
0.35 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.10 REF.
0.40 REF.
0.10 0.20
0.45 0.55
0.85 1.15
TOP VIEW
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current 2 , VGS@10V
Pulsed Drain Current 1
TA=25°C
TA=70°C
ID
IDM
Power Dissipation
TA=25°C
PD
Linear Derating Factor
Operating Junction and Storage Temperature Range
Tj, Tstg
Thermal Resistance Rating
Maximum Junction to Ambient 2
RθJA
Notes:
1. Pulse width limited by Max. junction temperature.
2. Surface mounted on 1 in2 copper pad of FR4 board; 270℃/W when mounted on Min. copper pad.
Ratings
30
±20
3.6
2.8
10
1.38
0.01
-55~150
90
Unit
V
V
A
A
W
W / °C
°C
°C / W
http://www.SeCoSGmbH.com/
09-Nov-2012 Rev. B
Any changes of specification will not be informed individually.
Page 1 of 4
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet SMG5406.PDF ] | |
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