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SXA389BZ Schematic ( PDF Datasheet ) - RF Micro Devices

Teilenummer SXA389BZ
Beschreibung MEDIUM POWER GaAs HBT AMPLIFIER
Hersteller RF Micro Devices
Logo RF Micro Devices Logo 




Gesamt 10 Seiten
SXA389BZ Datasheet, Funktion
SXA389BZ
400MHz to
2500 MHz
¼W Medium
Power GaAs
HBT Amplifier
With Active
Bias
SXA389BZ
400MHz to 2500MHz ¼W MEDIUM POWER
GaAs HBT AMPLIFIER WITH ACTIVE BIAS
Package: SOT-89
Product Description
RFMD’s SXA389BZ amplifier is a high efficiency GaAs Heterojunction
Bipolar Transistor (HBT) MMIC housed in low-cost surface mountable plas-
tic package. These HBT MMICs are fabricated using molecular beam epi-
taxial growth technology which produces reliable and consistent
performance from wafer to wafer and lot to lot. These amplifiers are spe-
cially designed for use as driver devices for infrastructure equipment in
the 400 MHz to 2500 MHz cellular, ISM, WLL, PCS, WCDMA applications.
Its high linearity makes it an ideal choice for multi-carrier as well as digital
Optimum Technology applications.
Matching® Applied
GaAs HBT
Typical OIP3, P1dB, Gain
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
50
45
40
35
30
25
20
OIP3
P1dB
Gain
Si CMOS
Si BJT
GaN HEMT
InP HBT
RF MEMS
15
10
5
0
850 MHz
1960 MHz 2140 MHz 2450 MHz
LDMOS
Features
Lower RTH for increased MTTF
108 Hours at TLead=85C
On-Chip Active Bias Control, Sin-
gle 5V Supply
Excellent Linearity:+43dBm Typ.
OIP3 at 1960MHz
High P1dB :+25dBm Typ.
High Gain:+18.5dB at 850MHz
Efficient: Consumes Only
575 mW
Applications
W-CDMA, PCS, Cellular Systems
Multi-Carrier Applications
Parameter
Small Signal Gain
Output Power at 1dB Compression
Output Third Order Intercept Point
Noise Figure
Input VSWR
Operating Dissipated Power
Device Operating Current
Thermal Resistance
Min.
12.5
24.0
39.0
90
Specification
Typ.
18.4
13.6
13.5
12.8
25.0
25.0
25.0
25.0
41.0
43.0
42.0
41.0
4.5
4.8
5.0
5.7
1.2:1
1.3:1
1.2:1
1.2:1
575.0
115
70
Max.
15.0
6.3
2.0:1
135
Unit
dB
dB
dB
dB
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dB
dB
dB
dB
mW
mA
°C/W
Condition
850 MHz
1960 MHz
2140 MHz
2450 MHz
850 MHz
1960 MHz
2140 MHz
2450 MHz
850MHz, POUT per tone=+11dBm, Tone
Spacing = 1 MHz
1960 MHz
2140 MHz
2450 MHz
850 MHz
1960 MHz
2140 MHz
2450 MHz
850 MHz
1960 MHz
2140 MHz
2450 MHz
VCC = 5 V
junction to backside
DS110610
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
1 of 10






SXA389BZ Datasheet, Funktion
SXA389BZ
2450MHz Application Circuit Data, VCC=5V, ID=115mA (Tuned for Output IP3)
30
28
26
24
22
20
2 .4
P1dB vs. Frequency
2 .4 2
2 .4 4
2 .4 6
GHz
25C
85C
-40C
2 .4 8
2 .5
20
18
16
14
12
10
2 .4
Gain vs. Frequency
25C
85C
-40C
2 .4 2
2 .4 4
2 .4 6
GHz
2 .4 8
2 .5
0
-5
-10
-15
-20
-25
-30
-35
2 .4
Input/Output Return Loss,
Isolation vs. Frequency, T=25°C
S11
S12
S22
2 .4 2
2 .4 4
2 .4 6
GHz
2 .4 8
2 .5
Third Order Intercept vs. Frequency
(POUT per tone = 11dBm)
45
25C
43 85C
-40C
41
39
37
35
2 .4
2.42
2.44
2 .4 6
GHz
2 .4 8
2 .5
Third Order Intercept vs. Tone Power
Frequency = 2.45 GHz
45
25C
43 85C
-40C
41
39
37
35
0 2 4 6 8 10 12 14 16 18
POUT per tone (dBm)
6 of 10
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
DS110610

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