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SP10200S Schematic ( PDF Datasheet ) - SeCoS

Teilenummer SP10200S
Beschreibung 10.0 AMP Schottky Barrier Rectifiers
Hersteller SeCoS
Logo SeCoS Logo 




Gesamt 2 Seiten
SP10200S Datasheet, Funktion
Elektronische Bauelemente
SP10200S
Voltage 200V
10.0 Amp Schottky Barrier Rectifier
RoHS Compliant Product
A suffix of “-C” specifies and halogen free
FEATURES
Fast switching for high efficiency
Low forward voltage drop
High current capability
Low reverse leakage current
High surge current capability
ITO-220A
MECHANICAL DATA
CaseMolded plastic ITO-220A
EpoxyUL 94V-0 rate flame retardant
TerminalsSolderable per MIL-STD-202
method 208
PolarityColor band denotes cathode
Mounting positionAny
Weight2.24 grams
 
REF.
Millimeter
Min. Max.
A 9.9 10.1
B 14.8 15.5
C 13.0 13.8
D 8.4 8.6
E 4.2 4.8
F 2.9 3.3
REF.
G
H
J
K
L
M
Millimeter
Min. Max.
5.10 BSC
3.45 3.75
2.5 2.9
0.6 BSC
0.30 0.90
φ2.9 φ3.5

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Rating at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, de-rate current by 20%.)
Parameter
Symbol
Rating
Maximum Recurrent Peak Reverse Voltage
Working Peak Reverse Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
Peak Forward Surge Current, 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Maximum Instantaneous Forward
IF=10A, TA=25°C
Voltage
IF=10A, TA=125°C
Maximum DC Reverse Current at Rated
TA=25°C
DC Blocking Voltage
TA=125°C
Typical Junction Capacitance 1
Typical Thermal Resistance 2
Voltage Rate Of Chance (Rated VR)
Operating Temperature Range TJ
Storage Temperature Range TSTG
Notes
1. Measured at 1.0 MHz and applied reverse voltage of 5.0 Volts DC.
2. Thermal Resistance junction to case.
VRRM
VRSM
VDC
IF
IFSM
VF
IR
CJ
RθJC
dv / dt
TJ
TSTG
200
200
200
10
180
0.95
0.8
0.02
9
350
4
10000
-50~150
-65~175

Unit
V
V
V
A
A
V
mA
pF
°C / W
V / μs
°C
°C
http://www.SeCoSGmbH.com/
13-Jul-2012 Rev. B
Any changes of specification will not be informed individually.
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