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SMS6001 Schematic ( PDF Datasheet ) - SeCoS

Teilenummer SMS6001
Beschreibung N-Ch Enhancement Mode Power MOSFET
Hersteller SeCoS
Logo SeCoS Logo 




Gesamt 4 Seiten
SMS6001 Datasheet, Funktion
Elektronische Bauelemente
SMS6001
440mA, 60V, RDS(ON) 2
N-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product
A Suffix of “-C” specifies halogen & lead-free
DESCRIPTIONS
The SMS6001 is N-Channel enhancement MOS Field
Effect Transistor. Uses advanced trench technology and
design to provide excellent RDS (ON)with low gate charge.
This device is suitable for use in DC-DC conversion, load
switch and level shift.
MECHANICAL DATA
Trench Technology
Supper high density cell design
Excellent ON resistance
Extremely Low Threshold Voltage
ESD Rating: 2KV HBM
APPLICATION
DC-DC converter circuit
Load Switch
DEVICE MARKING:
W61*
* = Date Code
PACKAGE INFORMATION
Package
MPQ
SOT-23
3K
Leader Size
7’ inch
SOT-23
A
L
3
Top View
CB
12
KE
1
3
2
D
F GH J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.10 2.65
1.20 1.40
0.89 1.15
1.78 2.04
0.30 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.09 0.18
0.35 0.65
0.08 0.20
0.6 REF.
0.95 BSC.
Pin Configuration (Top View)
MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Drain – Source Voltage
Gate – Source Voltage
Continuous Drain Current 1.4
TA= 25°C
TA= 70°C
Power Dissipation 1.4
TA= 25°C
TA= 70°C
Continuous Drain Current 2.4
TA= 25°C
TA= 70°C
Power Dissipation 2.4
Pulsed Drain Current 3
TA= 25°C
TA= 70°C
Maximum Junction-to-Lead
Operating Junction & Storage Temperature Range
VDS
VGS
ID
PD
ID
PD
IDM
RθJL
TJ, TSTG
10S
0.5
0.4
0.69
0.44
0.47
0.38
0.6
0.39
Rating
Steady State
60
±20
0.44
0.35
0.53
0.34
0.42
0.33
0.47
0.3
1
260
-55~150
Unit
V
V
A
W
A
W
A
°C / W
°C
http://www.SeCoSGmbH.com/
27-Jan-2014 Rev. A
Any changes of specification will not be informed individually.
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