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Teilenummer | SDP10N60 |
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Beschreibung | N-Channel Enhancement Mode Field Effect Transistor | |
Hersteller | SamHop Microelectronics | |
Logo | ||
Gesamt 11 Seiten Sa mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
SDP10N60
SDF10N60
Ver 1.1
PRODUCT SUMMARY
VDSS ID RDS(ON) (Ω) Typ
600V 10A 0.62 @ VGS=10V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
TO-220 and TO-220F Package.
D
GDS
SDP SERIES
TO-220
GDS
SDF SERIES
TO-220F
G
S
ORDERING INFORMATION
Ordering Code
Package
SDP10N60HZ
TO-220
SDP10N60PZ
TO-220
SDF10N60HZ
TO-220F
SDF10N60PZ
TO-220F
Marking Code
SDP10N60
10N60
SDF10N60
10N60
Delivery Mode
Tube
Tube
Tube
Tube
RoHS Status
Halogen Free
Pb Free
Halogen Free
Pb Free
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Symbol Parameter
SDP10N60 SDF10N60
VDS Drain-Source Voltage
VGS Gate-Source Voltage
600
±30 ±30
ID
Drain Current-Continuous a
TC=25°C
TC=100°C
10 10
66
IDM -Pulsed a
40 40
EAS Single Pulse Avalanche Energy c
709
PD
Maximum Power Dissipation
TC=25°C
TC=100°C
162 52
65 21
TJ, TSTG
Operating Junction and Storage
Temperature Range
-55 to 150
Units
V
V
A
A
A
mJ
W
W
°C
THERMAL CHARACTERISTICS
R JC
R JA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
0.77
62.5
2.4
62.5
°C/W
°C/W
Details are subject to change without notice.
1
Dec,24,2013
www.samhop.com.tw
SDP10N60
SDF10N60
Ver 1.1
Dec,24,2013
6 www.samhop.com.tw
6 Page | ||
Seiten | Gesamt 11 Seiten | |
PDF Download | [ SDP10N60 Schematic.PDF ] |
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