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Teilenummer | SDP08N50 |
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Beschreibung | N-Channel Enhancement Mode Field Effect Transistor | |
Hersteller | SamHop Microelectronics | |
Logo | ||
Gesamt 11 Seiten Sa mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
SDP08N50
SDF08N50
Ver 2.4
PRODUCT SUMMARY
VDSS ID RDS(ON) (Ω) Typ
500V
8A
0.7 @ VGS=10V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
TO-220 and TO-220F Package.
D
GDS
SDP SERIES
TO-220
GDS
SDF SERIES
TO-220F
G
S
ORDERING INFORMATION
Ordering Code
Package
SDP08N50HZ
TO-220
SDP08N50PZ
TO-220
SDF08N50HZ
TO-220F
SDF08N50PZ
TO-220F
Marking Code
SDP08N50
08N50
SDF08N50
08N50
Delivery Mode
Tube
Tube
Tube
Tube
RoHS Status
Halogen Free
Pb Free
Halogen Free
Pb Free
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Symbol Parameter
SDP08N50 SDF08N50
VDS Drain-Source Voltage
500
VGS Gate-Source Voltage
±30 ±30
ID
Drain Current-Continuous a
TC=25°C
TC=100°C
88
5.7 5.7
IDM -Pulsed a
24 24
EAS Single Pulse Avalanche Energy c
225
PD
Maximum Power Dissipation
TC=25°C
TC=100°C
75 25
37.5 12.5
TJ, TSTG
Operating Junction and Storage
Temperature Range
-55 to 175
Units
V
V
A
A
A
mJ
W
W
°C
THERMAL CHARACTERISTICS
R JC
R JA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
26
62.5 62.5
°C/W
°C/W
Details are subject to change without notice.
1
Dec,24,2013
www.samhop.com.tw
SDP08N50
SDF08N50
Ver 2.4
Dec,24,2013
6 www.samhop.com.tw
6 Page | ||
Seiten | Gesamt 11 Seiten | |
PDF Download | [ SDP08N50 Schematic.PDF ] |
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