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Teilenummer | SDP03N80 |
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Beschreibung | N-Channel Enhancement Mode Field Effect Transistor | |
Hersteller | SamHop Microelectronics | |
Logo | ||
Gesamt 11 Seiten Sa mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
SDP03N80
SDF03N80
Ver 1.1
PRODUCT SUMMARY
VDSS ID RDS(ON) (Ω) Typ
800V
3.0A
3.3 @ VGS=10V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
TO-220 and TO-220F Package.
D
GDS
SDP SERIES
TO-220
GDS
SDF SERIES
TO-220F
G
S
ORDERING INFORMATION
Ordering Code
Package
Marking Code
Delivery Mode
RoHS Status
SDP03N80HZ
TO-220
SDP03N80
Tube
Halogen Free
SDP03N80PZ
TO-220
03N80
Tube
Pb Free
SDF03N80HZ
TO-220F
SDF03N80
Tube
Halogen Free
SDF03N80PZ
TO-220F
03N80
Tube
Pb Free
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Symbol Parameter
SDP03N80 SDF03N80
VDS Drain-Source Voltage
800
VGS Gate-Source Voltage
ID Drain Current-Continuous a
TC=25°C
TC=70°C
±30 ±30
3 3e
2.5 2.5 e
IDM -Pulsed b
8.9 8.9e
EAS Single Pulse Avalanche Energy d
100
PD
a
Maximum Power Dissipation
TC=25°C
TC=70°C
84 42
58 29
TJ, TSTG
Operating Junction and Storage
Temperature Range
-55 to 175
Units
V
V
A
A
A
mJ
W
W
°C
THERMAL CHARACTERISTICS
R JC
R JA
Thermal Resistance, Junction-to-Case a
Thermal Resistance, Junction-to-Ambient a
1.8 3.6 °C/W
62.5 62.5 °C/W
Details are subject to change without notice.
1
Dec,24,2013
www.samhop.com.tw
SDP03N80
SDF03N80
Ver 1.1
Dec,24,2013
6 www.samhop.com.tw
6 Page | ||
Seiten | Gesamt 11 Seiten | |
PDF Download | [ SDP03N80 Schematic.PDF ] |
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