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ACE2607B Schematic ( PDF Datasheet ) - ACE Technology

Teilenummer ACE2607B
Beschreibung P-Channel Enhancement Mode Field Effect Transistor
Hersteller ACE Technology
Logo ACE Technology Logo 




Gesamt 5 Seiten
ACE2607B Datasheet, Funktion
ACE2607B
P-Channel Enhancement Mode Field Effect Transistor
Description
ACE2607B is produced with high cell density, DMOS trench technology, which is especially used to
minimize on-state resistance. This device particularly suits for low voltage application such as portable
equipment, power management and other battery powered circuits, and low in-line power loss are needed
in a very small outline surface mount package.
Features
VDS(V)=-30V, ID=-3.5A
RDS(ON)=52mΩ@VGS=-10V
RDS(ON)=68mΩ@VGS=-4.5V
High density cell design for low RDS(ON)
Absolute Maximum Ratings
Parameter
Symbol Max Unit
Drain-Source Voltage
VDSS
-30 V
Gate-Source Voltage
VGSS ±20 V
Drain Current (Note 1) Continuous TA=25
Pulse (Note 2)
ID
-3.5
A
-20
Power Dissipation(1) (Note 1)
PD 650 mW
Operating and Storage Temperature Range TJ,TSTG -55 to 150 OC
Packaging Type
SOT-23-6L
1
VER 1.3 1





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