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Teilenummer | ACE2607B |
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Beschreibung | P-Channel Enhancement Mode Field Effect Transistor | |
Hersteller | ACE Technology | |
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Gesamt 5 Seiten ACE2607B
P-Channel Enhancement Mode Field Effect Transistor
Description
ACE2607B is produced with high cell density, DMOS trench technology, which is especially used to
minimize on-state resistance. This device particularly suits for low voltage application such as portable
equipment, power management and other battery powered circuits, and low in-line power loss are needed
in a very small outline surface mount package.
Features
VDS(V)=-30V, ID=-3.5A
RDS(ON)=52mΩ@VGS=-10V
RDS(ON)=68mΩ@VGS=-4.5V
High density cell design for low RDS(ON)
Absolute Maximum Ratings
Parameter
Symbol Max Unit
Drain-Source Voltage
VDSS
-30 V
Gate-Source Voltage
VGSS ±20 V
Drain Current (Note 1) Continuous TA=25℃
Pulse (Note 2)
ID
-3.5
A
-20
Power Dissipation(1) (Note 1)
PD 650 mW
Operating and Storage Temperature Range TJ,TSTG -55 to 150 OC
Packaging Type
SOT-23-6L
1
VER 1.3 1
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Seiten | Gesamt 5 Seiten | |
PDF Download | [ ACE2607B Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
ACE2607B | P-Channel Enhancement Mode Field Effect Transistor | ACE Technology |
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