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Teilenummer | ACE2600B |
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Beschreibung | Dual N-Channel Enhancement Mode Field Effect Transistor | |
Hersteller | ACE Technology | |
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Gesamt 6 Seiten ACE2600B
Dual N-Channel Enhancement Mode Field Effect Transistor with ESD Protection
Description
The ACE2600B uses advanced trench technology to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch. It is ESD
protected.
Features
VDS(V)=20V
ID=6A (VGS=4.5V)
RDS(ON)<22mΩ (VGS=4.5V)
RDS(ON)<26mΩ (VGS=2.5V)
RDS(ON)<34mΩ (VGS=1.8V)
ESD Protected: 2000V
Absolute Maximum Ratings
Parameter
Symbol Max Unit
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Continuous) * AC TA=25 OC
TA=70 OC
VDSS
VGSS
ID
20 V
±8 V
6
4.8 A
Drain Current (Pulse) * B
IDM 30
Power Dissipation
TA=25 OC
TA=70 OC
PD
1.3
W
0.8
Operating and Storage Temperature Range TJ,TSTG -55 to 150 OC
Packaging Type
SOT-23-6L
VER 1.2 1
ACE2600B
Dual N-Channel Enhancement Mode Field Effect Transistor with ESD Protection
Notes
ACE does not assume any responsibility for use as critical components in life support devices or systems
without the express written approval of the president and general counsel of ACE Electronics Co., LTD.
As sued herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant
into the body, or (b) support or sustain life, and shoes failure to perform when properly used in
accordance with instructions for use provided in the labeling, can be reasonably expected to result in
a significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can
be reasonably expected to cause the failure of the life support device or system, or to affect its safety
or effectiveness.
ACE Technology Co., LTD.
http://www.ace-ele.com/
VER 1.2 6
6 Page | ||
Seiten | Gesamt 6 Seiten | |
PDF Download | [ ACE2600B Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
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