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PDF ACE2358M Data sheet ( Hoja de datos )
| Número de pieza | ACE2358M | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | ACE Technology | |
| Logotipo |  |
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ACE2358M
N-Channel 60-V MOSFET
Description
ACE2358M uses advanced trench technology to provide excellent RDS(ON).
This device particularly suits for low voltage application such as power management of desktop
computer or notebook computer power management, DC/DC converter.
Features
• Low rDS(on) trench technology
• Low thermal impedance
• Fast switching speed
Applications
• White LED boost converters
• Automotive Systems
• Industrial DC/DC Conversion Circuits
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current a
Pulse Drain Current b
TA=25℃
TA=70℃
Continuous Source Current (Diode Conduction) a
Power Dissipation a
TA=25℃
TA=70℃
Operating Temperature / Storage Temperature
*1 Pw ≦10 μs, Duty cycle ≦1 %
*2 When mounted on a 1*0.75*0.062 inch glass epoxy board%
Symbol
VDS
VGS
ID
IDM
IS
PD
TJ/TSTG
Limit
60
±20
3.1
2.5
1.5
1.9
1.3
0.8
-55/150
Units
V
V
A
A
A
W
OC
THERMAL RESISTANCE RATINGS
Parameter
Symbol Maximum
Maximum Junction-to-Ambient a
t <= 10 sec
Steady State
RθJA
100
166
Units
OC/W
VER 1.1 1
1 page  
Typical Performance Characteristics
ACE2358M
N-Channel 60-V MOSFET
Qg - Total Gate Charge (nC)
7. Gate Charge
TJ-Junction Temperature(OC)
8. Normalized On-Resistance Vs
Junction Temperature
VDS Drain to Source Voltage (V)
9. Safe Operating Area
t1 TIME (sec)
10.Single Pulse Maximum Power Dissipation
t1 TIME (sec)
11. Normalized Thermal Transient Junction to Ambient
VER 1.1 5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet ACE2358M.PDF ] | |
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