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ACE2320M Schematic ( PDF Datasheet ) - ACE Technology

Teilenummer ACE2320M
Beschreibung N-Channel MOSFET
Hersteller ACE Technology
Logo ACE Technology Logo 




Gesamt 7 Seiten
ACE2320M Datasheet, Funktion
ACE2320M
N-Channel 20-V MOSFET
Description
ACE2320M uses advanced trench technology to provide excellent RDS(ON).
This device particularly suits for low voltage application such as power management of desktop
computer or notebook computer power management, DC/DC converter.
Features
Low rDS(on) provides higher efficiency and extends battery life
Low thermal impedance copper leadframe SOT-23 saves board space
Fast switching speed
High performance trench technology
Applications
White LED boost converters
Automotive Systems
Industrial DC/DC Conversion Circuits
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current a
Pulsed Drain Current b
TA=25
TA=70
Continuous Source Current (Diode Conduction) a
Power Dissipation a
TA=25
TA=70
Operating temperature / storage temperature
Symbol Limit Units
VDS 20 V
VGS ±8 V
7.0
ID
A
5.5
IDM 20 A
IS 1.9 A
1.3
PD
W
0.8
TJ/TSTG -55~150
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Ambient a
t <= 10 sec
Steady State
RθJA
Maximum
100
166
Units
°C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
VER 1.1 1






ACE2320M Datasheet, Funktion
Packing Information
SOT-23-3
ACE2320M
N-Channel 20-V MOSFET
SYMBOLS
A
A1
A2
b
C
D
E
E1
e
e1
L
L1
L2
R
Θ
Θ1
MILLIMETERS
MIN NOM MAX
0.80
0.95
1.10
0.01 0.10
0.85
0.90 0.925
0.30
0.40
0.50
0.10 0.15 0.25
2.70 2.90 3.10
2.60 2.80 3.00
1.4 1.60 1.80
0.95 BSC
1.90 BSC
0.30
0.40
0.60
0.60REF
0.25BSC
0.10
0° 4° 8°
7°NOM
nit: mm
VER 1.1 6

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