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Teilenummer | ACE2320M |
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Beschreibung | N-Channel MOSFET | |
Hersteller | ACE Technology | |
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Gesamt 7 Seiten ACE2320M
N-Channel 20-V MOSFET
Description
ACE2320M uses advanced trench technology to provide excellent RDS(ON).
This device particularly suits for low voltage application such as power management of desktop
computer or notebook computer power management, DC/DC converter.
Features
• Low rDS(on) provides higher efficiency and extends battery life
• Low thermal impedance copper leadframe SOT-23 saves board space
• Fast switching speed
• High performance trench technology
Applications
• White LED boost converters
• Automotive Systems
• Industrial DC/DC Conversion Circuits
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current a
Pulsed Drain Current b
TA=25℃
TA=70℃
Continuous Source Current (Diode Conduction) a
Power Dissipation a
TA=25℃
TA=70℃
Operating temperature / storage temperature
Symbol Limit Units
VDS 20 V
VGS ±8 V
7.0
ID
A
5.5
IDM 20 A
IS 1.9 A
1.3
PD
W
0.8
TJ/TSTG -55~150 ℃
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Ambient a
t <= 10 sec
Steady State
RθJA
Maximum
100
166
Units
°C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
VER 1.1 1
Packing Information
SOT-23-3
ACE2320M
N-Channel 20-V MOSFET
SYMBOLS
A
A1
A2
b
C
D
E
E1
e
e1
L
L1
L2
R
Θ
Θ1
MILLIMETERS
MIN NOM MAX
0.80
0.95
1.10
0.01 0.10
0.85
0.90 0.925
0.30
0.40
0.50
0.10 0.15 0.25
2.70 2.90 3.10
2.60 2.80 3.00
1.4 1.60 1.80
0.95 BSC
1.90 BSC
0.30
0.40
0.60
0.60REF
0.25BSC
0.10
0° 4° 8°
7°NOM
nit: mm
VER 1.1 6
6 Page | ||
Seiten | Gesamt 7 Seiten | |
PDF Download | [ ACE2320M Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
ACE2320M | N-Channel MOSFET | ACE Technology |
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