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PDF DMC25D1UVT Data sheet ( Hoja de datos )
| Número de pieza | DMC25D1UVT | |
| Descripción | COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET | |
| Fabricantes | Diodes | |
| Logotipo |  |
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DMC25D1UVT
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Product Summary
Device
Q1
Q2
V(BR)DSS
25V
-12V
RDS(ON)
4Ω @ VGS = 4.5V
55mΩ @ VGS= -4.5V
70mΩ @ VGS= -2.5V
ID
TA = +25°C
0.5A
-3.9A
-3.5A
Description
This new generation MOSFET is designed to minimize the on-state
resistance (RDS(ON)) and yet maintain superior switching performance,
making it ideal for high efficiency power management applications.
Applications
DC-DC Converters
Power Management Functions
Load Switch
Features and Benefits
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: TSOT26
Case Material: Molded Plastic, ―Green‖ Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish – Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208 e3
Weight: 0.013 grams (Approximate)
TSOT26
Vin, R1 4
Q2
3 Vout, C1
D1
D2
ON/OFF 5
2
Q1
Vout, C1
G1
G2
Top View
R1, C1 6
1 R2
Top View
Internal circuit
Gate Protection
Diode
S1
Q1 N-Channel MOSFET
Gate Protection
Diode
S2
Q2 P-Channel MOSFET
Ordering Information (Note 4)
Notes:
Part Number
DMC25D1UVT-7
DMC25D1UVT-13
Case
TSOT26
TSOT26
Packaging
3000 / Tape & Reel
10000 / Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
G2
D1
G1
CC65DD
S2
S1 D2 D2
C6D = Product Type Marking Code
YM or YM = Date Code Marking
Y or Y = Year (ex: C = 2015)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2015
C
Jan Feb
12
2016
D
Mar
3
2017
E
Apr May
45
2018
F
Jun Jul
67
2019
G
Aug
8
Sep
9
2020
H
Oct
O
2021
I
Nov Dec
ND
DMC25D1UVT
Document number: DS37507 Rev. 2 - 2
1 of 9
www.diodes.com
April 2015
© Diodes Incorporated
1 page  
DMC25D1UVT
1.5
1.4
1.3
1.2
1.1
1
0.9
0.8
0.7
0.6 VGS=0V, TA=150℃
0.5
0.4 VGS=0V, TA=125℃
0.3
0.2
0.1
0
VGS=0V, TA=85℃
VGS=0V, TA=25℃
VGS=0V, TA=-55℃
0 0.3 0.6 0.9 1.2
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
1.5
100
f=1MHz
10
Ciss
Coss
Crss
1
0
5 10 15
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
20
10 10
RDS(ON) Limited
8 PW=1ms PW=100μs
1 PW=10ms
6
VDS=5V, ID=200mA
4
2
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
Qg (nC)
Figure 11. Gate Charge
1
0.1
0.01
0.1
PW=100ms
PW=1s
TJ(MAX)=150℃
TA=25℃
Single Pulse
DUT on 1*MRP board
VGS=10V
PW=10s
DC
1 10
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
100
D=0.5
D=0.3
0.1
D=0.1
D=0.05
D=0.9
D=0.7
D=0.02
0.01
D=0.01
D=0.005
D=Single Pulse
0.001
1E-05 0.0001
DMC25D1UVT
Document number: DS37507 Rev. 2 - 2
RθJA(t)=r(t) * RθJA
RθJA=149℃/W
Duty Cycle, D=t1 / t2
0.001
0.01
0.1
1
10
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance
5 of 9
www.diodes.com
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April 2015
© Diodes Incorporated
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